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SEMICONDUCTOR KTC3790U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
E
FEATURES M B M
Low Noise Figure, High Gain. DIM MILLIMETERS
A _
2.00 + 0.20
2 D
NF=1.2dB, |S21e| =13dB (f=1GHz). 2 B _
1.25 + 0.15
A
_
J
C 0.90 + 0.10
3
G
1 D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
MAXIMUM RATING (Ta=25 ) K 0.00-0.10
L 0.70
CHARACTERISTIC SYMBOL RATING UNIT
C
H
L
M _
0.42 + 0.10
N 0.10 MIN
Collector-Base Voltage VCBO 20 V N
K
N
Collector-Emitter Voltage VCEO 10 V
VEBO 1. EMITTER
Emitter-Base Voltage 1.5 V
2. BASE
Collector Current IC 65 mA 3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 USM
Marking
h FE Rank Lot No.
Type Name
R
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 A
Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 A
DC Current Gain hFE (Note1) VCE=8V, IC=20mA 50 - 250
Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz (Note2) - 0.35 0.9 pF
Transition Frequency fT VCE=8V, IC=20mA - 9 - GHz
Insertion Gain |S21e|2 VCE=8V, IC=20mA, f=1GHz 11 13 - dB
Noise Figure NF VCE=8V, IC=7mA, f=1GHz - 1.2 2.5 dB
Note 1 : hFE Classification L:50~100, M:80~160, N:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
2008. 8. 29 Revision No : 2 1/5
KTC3790U
TYPICAL CHARACTERISTICS
REVERSE TRANSFER CAPACITANCE Cre (pF)
hFE - IC Cre - VCB
300 VCE=8V
3
f =1.0MHz
DC CURRENT GAIN hFE
200 Ta=25 C 2 Ta=25 C
100 1
70
50 0.5
30
10 0.1
0.5 1 5 10 50 1 5 10 20 30
COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2
f T - IC S21e - IC
TRANSITION FREQUENCY fT (GHz)
30 VCE=8V 15
INSERTION GAIN S21e (dB)
Ta=25 C
20
2
10 10
5
5
VCE = 8V
f = 1.0GHz
Ta=25 C
1 0
1 5 10 20 30 0.5 1 5 10 50 70
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
2
S21e - f NF - I C
20 7
VCE = 8V
INSERTION GAIN S21e (dB)
VCE=8V
NOISE FIGURE NF (dB)
f = 1.0GHz
IC=20mA 6
16 Ta=25 C Ta=25 C
2
2
5
S21e
12
4
8 3
2
4
1
0 0
0.1 0.5 1.0 2.0 3.0 0.5 1 5 10 50 70
FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA)
2008. 8. 29 Revision No : 2 2/5
KTC3790U
Pc - Ta
COLLECTOR POWER DISSIPATION
200
PC (mW)
100
0
0 50 100 150
AMBIENT TEMPERATURE Ta ( C)
S-PARAMETER
(VCE = 8V, IC = 5mA, ZO=50 Ta = 25 )
Frequency S11 S21 S21 S22
MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.728 -45.3 12.107 138.7 0.036 66.2 0.825 -21.6
400 0.490 -74.5 8.097 114.2 0.065 61.6 0.675 -26.6
600 0.343 -93.2 6.260 102.3 0.079 61.6 0.582 -29.0
800 0.253 -110.1 4.623 90.1 0.090 61.2 0.529 -28.6
1000 0.202 -131.1 4.004 83.6 0.101 61.3 0.500 -30.1
1200 0.176 -148.9 3.250 75.8 0.125 60.8 0.470 -31.4
1400 0.176 -162.8 3.021 69.4 0.144 60.0 0.448 -33.4
1600 0.179 173.9 2.575 63.4 0.160 59.8 0.427 -34.8
1800 0.186 163.3 2.520 58.9 0.188 59.1 0.406 -37.5
2000 0.211 151.1 2.183 53.4 0.202 58.9 0.386 -44.5
(VCE = 8V, IC = 20mA, ZO=50 Ta = 25 )
Frequency S11 S21 S21 S22
MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.366 -66.8 19.757 116.9 0.033 62.6 0.587 -22.5
400 0.194 -88.9 10.502 98.8 0.055 70.6 0.485 -23.8
600 0.124 -104.3 7.591 91.1 0.072 74.6 0.453 -24.3
800 0.077 -132.0 5.446 82.0 0.095 73.2 0.419 -23.2
1000 0.063 -156.4 4.653 77.6 0.107 72.1 0.413 -24.2
1200 0.065 179.5 3.754 71.6 0.135 72.1 0.392 -26.4
1400 0.074 168.0 3.460 66.5 0.164 70.1 0.369 -29.9
1600 0.108 147.0 2.934 61.9 0.178 69.6 0.347 -32.2
1800 0.116 137.6 2.870 58.2 0.205 66.3 0.333 -34.3
2000 0.134 131.2 2.479 53.4 0.221 64.0 0.312 -42.1
2008. 8. 29 Revision No : 2 3/5
KTC3790U
S11e S12e
VCE =8V VCE =8V
I C =5mA I C =5mA
Ta=25 C Ta=25 C
(UNIT : ) j50 90
120 60
j25 j100
2GHz
j150 150 30
j10 j250
2GHz f=0.2GHz
100 250 0.24
10 25 _
+ 180 0 0.061 0.12 0.18 0
0 50
-j10 -j250
f=0.2GHz
-j150 -150 -30
-j25 -j100
-120 -60
-j50 -90
S21e S22e
VCE =8V VCE =8V
I C =5mA 90 I C =5mA j50
Ta=25 C Ta=25 C
120 60 (UNIT : )
j25 j100
150 30 j150
f=0.2GHz
j10 j250
2GHz 100 250
_
+ 180 0 3.6 7.3 11 15 0 0 10 25 50
f=0.2GHz
-j10 2GHz -j250
-150 -30 -j150
-j25
-j100
-120 -60
-90 -j50
2008. 8. 29 Revision No : 2 4/5
KTC3790U
S11e S12e
VCE =8V VCE =8V
I C =20mA I C =20mA
Ta=25 C Ta=25 C
(UNIT : ) j50 90
120 60
j25 j100
2GHz
j150 150 30
j10 j250
2GHz f=0.2GHz
100 250 0.27
0 10 25 50 _
+ 180 0 0.066 0.13 0.2 0
-j10 f=0.2GHz -j250
-j150 -150 -30
-j25
-j100
-120 -60
-j50 -90
S21e S22e
VCE =8V VCE =8V
I C =20mA I C =20mA j50
90
Ta=25 C Ta=25 C
120 60 (UNIT : )
j25 j100
f=0.2GHz
150 30 j150
j10 j250
2GHz 100 250
5.9 12 18 0 10 25 50
180 0 24 0
2GHz f=0.2GHz
-j10 -j250
-150 -30 -j150
-j25
-j100
-120 -60
-90 -j50
2008. 8. 29 Revision No : 2 5/5
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