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SEMICONDUCTOR KTC3875S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Excellent hFE Linearity A _
2.93 + 0.20
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
D
High hFE : hFE=70 700. 2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
Low Noise : NF=1dB(Typ.), 10dB(Max.).
H
1 G 1.90
H 0.95
Complementary to KTA1504S. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
P 7
C
J
MAXIMUM RATING (Ta=25 )
M
K
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V 1. EMITTER
2. BASE
Collector-Emitter Voltage VCEO 50 V 3. COLLECTOR
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
SOT-23
Base Current IB 30 mA
Collector Power Dissipation PC 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
AL
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE(Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 0.86 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
VCE=6V, IC=0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification O:70 140, Y:120 240, GR(G):200 400, BL(L):350 700
2004. 12. 4 Revision No : 3 1/3
KTC3875S
I C - V CE h FE - I C
280 3k
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (mA)
240 Ta=25 C EMITTER
5.0
DC CURRENT GAIN h FE
6.0 1k
200 3.0 500
2.0
160 300 VCE =6V
Ta=100 C
Ta=25 C
1.0
120 100
Ta=-25 C
80 0.5 50
30
40 I B =0.2mA V CE =1V
0
0 10
0 1 2 3 4 5 6 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C VBE(sat) - I C
30
COLLECTOR-EMITTER SATURATION
3 COMMON EMITTER
COMMON EMITTER
I C /I B =10
BASE-EMITTER SATURATION
I C /I B =10
Ta=25 C
1 10
VOLTAGE VBE(sat) (V)
0.5 5
V CE(sat) (V)
0.3 3
0.1 1
Ta=100 C
0.05 0.5
0.03 0.3
Ta=25 C
Ta=-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
fT - IE I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
V CE =10V VCE =6V
1k
Ta=25 C
BASE CURRENT I B (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo