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SEMICONDUCTOR KTC3911S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURES E
High Voltage : VCEO=120V. L B L
DIM MILLIMETERS
Excellent hFE Linearity A _
2.93 + 0.20
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
D
High hFE: hFE=200 700. 2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
Low Noise : NF=1dB(Typ.), 10dB(Max.).
H
1 G 1.90
H 0.95
Complementary to KTA1517S. J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
J
MAXIMUM RATING (Ta=25 )
M
K
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 120 V 1. EMITTER
2. BASE
Collector-Emitter Voltage VCEO 120 V 3. COLLECTOR
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
SOT-23
Base Current IB 20 mA
Collector Power Dissipation PC 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
h FE Rank Lot No.
Type Name
AD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=6V, IC=2mA 200 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.3 V
Transition Frequency fT VCE=6V, IC=1mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.0 - pF
VCE=6V, IC=0.1mA
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification GR(G):200 400 BL(L):350 700
2001. 2. 24 Revision No : 3 1/3
KTC3911S
2001. 2. 24 Revision No : 3 2/3
KTC3911S
2001. 2. 24 Revision No : 3 3/3
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