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SEMICONDUCTOR KTC3964
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
A
Switching Applications B D
Solenoid Drive Applications C
E
Temperature Compensated for Audio Amplifier Output Stage
F
FEATURES G
High DC current gain : hFE = 500(min) (IC=400mA)
Low Collector emitter saturation voltage : VCE(sat)=0.5V(max) H
DIM MILLIMETERS
J
(IC=300mA) A 8.3 MAX
K L B 5.8
C 0.7
D 3.2 + 0.1
_
E 3.5
F _
11.0 + 0.3
G 2.9 MAX
M
H 1.0 MAX
J 1.9 MAX
MAXIMUM RATING (Ta=25 ) N
O K _
0.75 + 0.15
P
1 2 3 L _
15.50 + 0.5
CHARACTERISTIC SYMBOL RATING UNIT M _
2.3 + 0.1
N _
0.65 + 0.15
Collector-Base Voltage VCBO 40 V 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector-Emitter Voltage VCEO 40 V 3. BASE
Emitter-Base Voltage VEBO 7 V
Collector Current IC 2 A TO-126
Collector Power Dissipation PC 1.5 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 40 - - V
DC Current Gain hFE VCE=1V, IC=400mA 500 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=300mA, IB=1mA - 0.3 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=300mA, IB=1mA - - 1.1 V
Transition Frequency fT VCE=2V, IC=100mA - 220 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF
OUTPUT
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