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SEMICONDUCTOR KTC3072D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
A I
FEATURES C J
DIM MILLIMETERS
Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A)
D
A _
6.60 + 0.2
B _
6.10 + 0.2
High Performance at Low Supply Voltage. C _
5.0 + 0.2
D _
1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
H P K _
2.00 + 0.20
MAXIMUM RATING (Ta=25 ) F F L
L _
0.50 + 0.10
_
M 0.91+ 0.10
O _
0.90 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3
P _
1.00 + 0.10
Q 0.95 MAX
Collector-Base Voltage VCBO 40 V
1. BASE
Collector-Emitter Voltage VCEO 20 V 2. COLLECTOR
3. EMITTER
Emitter-Base Voltage VEBO 7 V
Collector DC IC 5
A DPAK
Current Pulse (Note1) ICP 8
Collector Power Dissipation PC 1.0 W
Junction Temperature Tj 150 A I
C J
Storage Temperature Range Tstg -55 150
D
Note 1: Pulse Width 100mS, Duty Cycle 30% DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
_
5.0 + 0.2
Q
C
K
D _
1.10 + 0.2
H P
E _
9.50 + 0.6
G _
E
F 2.30 + 0.1
G _
0.76 + 0.1
H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
F F L _
K 2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 40 - - V
Collector Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 20 - - V
Emitter Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 7 - - V
Collector Cutoff Current ICBO VCB=20V, IE=0 - - 100 nA
Emitter Cutoff Current IEBO VEB=7V, IC=0 - - 100 nA
hFE(1)(Note1) VCE=2V, IC=0.5A 120 - 700
DC Current Gain
hFE(2) VCE=2V, IC=2A 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=60mA(Pulse) - - 0.4 V
Transition Frequency fT VCE=6V, IC=50mA 20 100 - MHz
Collector Output Capacitance Cob VCB=20V, f=1MHz, IE=0 - - 50 pF
Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700
2003. 3. 27 Revision No : 3 1/3
KTC3072D/L
Pc - Ta I C - VCE
COLLECTOR POWER DISSIPATION PC (W)
1.6 3.4
Ta=25 C
COLLECTOR CURRENT I C (A)
1.4 3.2
7mA
1.2 2.8
6mA
2.4 5mA
1.0
Ta 2.0 4mA
0.8 =2
5
C 1.6 3mA
0.6 1.2 2mA
0.4 0.8
I B =1mA
0.2 0.4
0 0
0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - VBE I C - VCE(sat)
8 8
VCE =10V I C /IB =30
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
7 7
Ta=25 C Ta=25 C
6 6
5 5
4 4
3 3
2 2
1 1
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
h FE - I C fT - IE
800 400
TRANSITION FREQUENCY f T (MHz)
VCE =2V VCE =6V
700
Ta=25 C Ta=25 C
DC CURRENT GAIN h FE
600 300
500
400 200
300
200 100
100
0 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A)
2003. 3. 27 Revision No : 3 2/3
KTC3072D/L
C ob - VCB SAFE OPERATION AREA
100 100
I E =0
OUTPUT CAPACITANCE C ob (pF)
COLLECTOR CURRENT I C (A)
f=1MHz 30
80 Ta=25 C I C MAX.(PULSED)*
10
60 3 I C MAX. t=
t=
1s
1
*
0m
1
s*
40
0.3
*SINGLE NONREPETITIVE
0.1 PULSE Tc=25 C
20 CURVES MUST BE DERATED
0.03 LINEARLY WITH INCREASE
IN TEMPERATURE.
0 0.01
1 3 5 10 30 50 100 0.1 0.3 1 3 10 30 100
COLLECTOR BASE VOLTAGE VCB (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27 Revision No : 3 3/3
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