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SEMICONDUCTOR KTC3198
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
A
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS
E A 4.70 MAX
K
Low Noise : NF=1dB(Typ.). at f=1kHz. G B 4.80 MAX
D C 3.70 MAX
Complementary to KTA1266.
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
H J _
14.00 + 0.50
F F K 0.55 MAX
MAXIMUM RATING (Ta=25 ) L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT N 1.00
C
1 2 3
L
M
Collector-Base Voltage VCBO 60 V
1. EMITTER
Collector-Emitter Voltage VCEO 50 V 2. COLLECTOR
3. BASE
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
TO-92
Base Current IB 50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
DC Current Gain
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Base Intrinsic Resistance rbb' VCB=10V, IE=1mA, f=30MHz - 50 -
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700
1994. 6. 24 Revision No : 0 1/3
KTC3198
1994. 6. 24 Revision No : 0 2/3
KTC3198
1994. 6. 24 Revision No : 0 3/3
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