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SEMICONDUCTOR KTC3198L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURES B C
Excellent hFE Linearity
: hFE(2)=100(Typ.) at VCE=6V, IC=150mA
A
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
Low Noise : NF=0.2dB(Typ.). f=(1kHz). N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTA1266L. (O,Y,GR class) G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO 60 V N 1.00
C
1 2 3
L
M
Collector-Emitter Voltage VCEO 50 V 1. EMITTER
2. COLLECTOR
Emitter-Base Voltage VEBO 5 V 3. BASE
Collector Current IC 150 mA
Emitter Current IE -150 mA
TO-92
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
hFE(1) (Note) VCE=6V, IC=2mA 70 - 700
DC Current Gain
hFE(2) VCE=6V, IC=150mA 25 100 -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.0 pF
Base Intrinsic Resistance rbb' VCB=10V, IE=1mA, f=30MHz - 50 -
NF(1) VCE=6V, IC=0.1mA, f=100Hz, Rg=10k - 0.5 6.0
Noise Figure dB
NF(2) VCE=6V, IC=0.1mA, f=1kHz, Rg=10k - 0.2 3.0
Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700
1994. 3. 23 Revision No : 0 1/1
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