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SEMICONDUCTOR KTC3209
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=1A)
High Speed Switching Time : tstg=1.0 S(Typ.)
Complementary to KTA1281.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 2 A
Emitter Current IE -2 A
Collector Power Dissipation PC 1 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100mA, IB=0 5 - - V
hFE (1) (Note) VCE=2V, IC=0.5A (Note) 70 - 240
DC Current Gain
hFE (2) (Note) VCE=2V, IC=1.5A 40 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.05A - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.05A - - 1.2 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 30 - pF
Turn-on Time ton - 0.1 -
Switching
Storage Time tstg - 1.0 - S
Time
Fall Time tf - 0.1 -
Note : hFE Classification 0:70 140, Y:120 240
2005. 12. 2 Revision No : 1 1/3
KTC3209
2005. 12. 2 Revision No : 1 2/3
KTC3209
2005. 12. 2 Revision No : 1 3/3
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