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SEMICONDUCTOR KTC4419
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
A C
HIGH SPEED DC-DC CONVERTER APPLICATION.
DIM MILLIMETERS
F
S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
FEATURES E
C _
2.70 + 0.3
B
Excellent Switching Times. D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
: ton=1.0 S(Max.), tf=0.5 S(Max.) at IC=1.5A. F _
3.0 + 0.3
G _
12.0 + 0.3
High Collector Voltage : VCEO=400V. H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
P _
6.8 + 0.1
MAXIMUM RATING (Ta=25 ) _
4.5 + 0.2
Q
R _
2.6 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT N N H S 0.5 Typ
Collector-Base Voltage VCBO 500 V
Collector-Emitter Voltage VCEO 400 V
1. BASE
Q
1 2 3
Emitter-Base Voltage VEBO 7 V 2. COLLECTOR
3. EMITTER
DC IC 5
Collector Current A
Pulse ICP 10
TO-220IS
Base Current IB 2 A
Collector Power Dissipation (Tc=25 ) PC 30 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=500V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 400 - - V
hFE(1) VCE=4V, IC=0.1A 20 - -
DC Current Gain
hFE(2) VCE=4V, IC=1.5A 10 - 40
Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A, IB=0.3A - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB==0.3A - - 1.0 V
Transition Frequency fT VCE=12V, IC=0.3A - 20 - MHz
OUTPUT
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