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SEMICONDUCTOR KTC4666
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
E
FEATURE M B M
High hFE : hFE=600 3600. DIM MILLIMETERS
A _
2.00 + 0.20
D
Noise Figure : 0.5dB(Typ.) at f=100kHz. 2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
MAXIMUM RATING (Ta=25 ) K 0.00-0.10
L 0.70
CHARACTERISTIC SYMBOL RATING UNIT
C
H _
L
M 0.42 + 0.10
N 0.10 MIN
Collector-Base Voltage VCBO 60 V N
K
N
Collector-Emitter Voltage VCEO 50 V
1. EMITTER
Emitter-Base Voltage VEBO 8 V
2. BASE
Collector Current IC 150 mA 3. COLLECTOR
Base Current IB 30 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150 ◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo