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SEMICONDUCTOR KTC4072V
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
FEATURES E
High Current. B
Low VCE(sat).
: VCE(sat) 250mV at IC=200mA/IB=10mA.
2 DIM MILLIMETERS
Complementary to KTA2012V. A _
1.2 +0.05
D
G
A
B _
0.8 +0.05
H
1 3 _
C 0.5 + 0.05
K
D _
0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
H 0.40
MAXIMUM RATING (Ta=25 ) P P
J _
0.12 + 0.05
K _
0.2 + 0.05
CHARACTERISTIC SYMBOL RATING UNIT P 5
C
Collector-Base Voltage VCBO 15 V
J
Collector-Emitter Voltage VCEO 12 V
1. EMITTER
Emitter-Base Voltage VEBO 6 V 2. BASE
3. COLLECTOR
IC 500 mA
Collector Current
ICP * 1 A
Collector Power Dissipation PC 100 mW VSM
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Single pulse Pw=1mS.
Marking
Type Name
LZ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
2002. 2. 20 Revision No : 2 1/3
KTC4072V
2002. 2. 20 Revision No : 2 2/3
KTC4072V
2002. 2. 20 Revision No : 2 3/3
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