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ktc4080e


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                                    SEMICONDUCTOR                                                                        KTC4080E
                                            TECHNICAL DATA                                     EPITAXIAL PLANAR NPN TRANSISTOR


  HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
  VHF BAND AMPLIFIER APPLICATION.

                                                                                                                         E
  FEATURES                                                                                                               B
    Small Reverse Transfer Capacitance                                                                                                     DIM       MILLIMETERS
                                                                                                                                            A               _
                                                                                                                                                       1.60 + 0.10
                                                                                                                                       D
         : Cre=0.7pF(Typ.)                                                                                    2                             B               _
                                                                                                                                                       0.85 + 0.10




                                                                                                   G
                                                                                                                                                            _




                                                                                               A
                                                                                                                                            C          0.70 + 0.10
    Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).                                                                            3




                                                                                                       H
                                                                                                               1                            D         0.27+0.10/-0.05
                                                                                                                                            E                 _
                                                                                                                                                         1.60 + 0.10
                                                                                                                                            G                 _
                                                                                                                                                         1.00 + 0.10
                                                                                                                                            H              0.50
                                                                                                                                            J                _
                                                                                                                                                        0.13 + 0.05

  MAXIMUM RATING (Ta=25                 )                                                                                              J




                                                                                                   C
           CHARACTERISTIC                   SYMBOL               RATING     UNIT
    Collector-Base Voltage                    VCBO                 40        V
                                                                                                           1. EMITTER
    Collector-Emitter Voltage                 VCEO                 30        V
                                                                                                           2. BASE

    Emitter-Base Voltage                      VEBO                  4        V                             3. COLLECTOR

    Collector Current                          IC                  20        mA
    Emitter Current                            IE                  -20       mA
    Collector Power Dissipation                PC                  100      mW                                                   ESM
    Junction Temperature                       Tj                  150
    Storage Temperature Range                  Tstg              -55 150




                                                                                                       Marking
                                                                                                                                      Type Name



                                                                                                                     Q                     h FE Rank




  ELECTRICAL CHARACTERISTICS (Ta=25                          )
               CHARACTERISTIC                  SYMBOL                       TEST CONDITION                     MIN.              TYP.       MAX.                  UNIT
    Collector Cut-off Current                       ICBO            VCB=18V, IE=0                                    -            -             0.5                   A
    Emitter Cut-off Current                           IEBO          VEB=4V, IC=0                                     -            -             0.5                   A
    DC Current Gain                             hFE(Note)           VCE=6V, IC=1mA                                 40             -             200
    Reverse Transfer Capacitance                      Cre           VCE=6V, f=1MHz                                   -           0.7             -                    pF
    Transition Frequency                               fT           VCE=6V, IC=1mA                                 300           550             -                MHz
    Collector-Base Time Constant                CC rbb       '
                                                                    VCB=6V, IE=-1mA, f=30MHz                         -            -              30                   pS
    Noise Figure                                      NF            VCC=6V, IE=-1mA                                  -           2.5            5.0
                                                                                                                                                                      dB
    Power Gain                                        Gpe           f=100MHz (Fig.)                                15             18             -

  Note : hFE Classification     R(1):40 80 , O(2):70         140 , Y(4):100 200


2001. 12. 28                      Revision No : 1                                                                                                                          1/6
                                                                  KTC4080E

  Fig.   Gpe TEST CIRCUIT

                                                                                                             6pF
                                                                                                                   OUTPUT
                                                                                                                   R L=50
                              0.01



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