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SEMICONDUCTOR KTC4377
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
A
C
FEATURES
H
High DC Current Gain and Excellent hFE Linearity G
: hFE(1)=140 600(VCE=1V, IC=0.5A)
B
: hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).
J
E
DIM MILLIMETERS
Low Saturation Voltage A 4.70 MAX
D D B _
2.50 + 0.20
: VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA).
K C 1.70 MAX
Small Flat Package. F F
D 0.45+0.15/-0.10
E 4.25 MAX
1W (Mounted on Ceramic Substrate). F _
1.50 + 0.10
G 0.40 TYP
1 2 3 H 1.75 MAX
J 0.75 MIN
K 0.5+0.10/-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT 1. BASE
2. COLLECTOR (HEAT SINK)
Collector-Base Voltage VCBO 30 V 3. EMITTER
VCES 30
Collector-Emitter Voltage V
VCEO 10
Emitter-Base Voltage VEBO 6 V SOT-89
DC IC 2
Collector Current A
Pulse (Note 1) ICP 4
DC IB 0.4
Base Current A
Pulse (Note 1) IBP 0.8
Marking
PC 500 mW
Collector Power Dissipation h FE Rank Lot No.
PC* 1 W
Junction Temperature Tj 150
Tstg Type Name
Storage Temperature Range
S
-55 150
Note 1 : Pulse Width 10mS, Duty Cycle 30%
PC* : KTC4377 mounted on ceramic substrate (250mm2x0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 10 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 6 - - V
hFE(1) (Note1) VCE=1V, IC=0.5A 140 - 600
DC Current Gain
hFE(2) VCE=1V, IC=2A 70 140 -
Collector-Emitter Saturation-Voltage VCE(sat) IC=2A, IB=50mA - 0.2 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=2A - 0.86 1.5 V
Transition Frequency fT VCE=1V, IC=0.5A - 150 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 27 - pF
Note : hFE(1) Classification A:140~240, B:200~330, C:300~450, D:420~600
2003. 9. 16 Revision No : 4 1/2
KTC4377
I C - V CE h FE - I C
4.0 1k
60 25 COMMON EMITTER
COLLECTOR CURRENT I C (A)
500 Ta=100 C
DC CURRENT GAIN hFE
Ta=25 C
15
3.0 300
10
Ta=25 C
Ta=-25 C
2.0 100
I B =5mA
50
1.0 30
COMMON EMITTER
VCE =1V
0
0 10
0 1.0 2.0 3.0 4.0 5.0 6.0 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C I C - V BE
1
COLLECTOR-EMITTER SATURATION
COMMON EMITTER 4.0
COLLECTOR CURRENT I C (A)
COMMON EMITTER
0.5 I C /I B =10 VCE =1V
VOLTAGE VCE(sat) (V)
0.3 3.2
2.4
0.1 C
Ta=100
Ta=25 C
C Ta=-25 C
00
0.05 =1 1.6
Ta
0.03
Ta=25 C 0.8
Ta=-25 C
0.01
0
0.01 0.03 0.1 0.3 1 3 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR-CURRENT I C (mA) BASE EMITTER VOLTAGE V BE (V)
SAFE OPERATING AREA P C - Ta
COLLECTOR POWER DISSIPATION PC (W)
10 1.2
1 MOUNTED ON CERAMIC
I C MAX(PULSE) * 1 SUBSTRATE
1.0
10
3 (250mm 2 x0.8t)
COLLECTOR CURRENT I C (A)
m
I C MAX(CONTI-
S
10 2 Ta=25 C
NUOUS) 0m
*
S 0.8
1 DC *
OP 0.6
ER 2
0.3 AT
IO
N 0.4
* SINGLE
0.1 NONREPETITIVE
PULSE Ta=25 C 0.2
CURVES MUST BE
0.03 DERATED LINEARLY
0
WITH INCREASE IN 0 20 40 60 80 100 120 140 160
TEMPERATURE
0.01 AMBIENT TEMPERATURE Ta ( C)
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE V CE (V)
2003. 9. 16 Revision No : 4 2/2
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