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SEMICONDUCTOR KTC4380
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION
FEATURES
High Voltage : VCEO=160V.
A
C
Large Continuous Collector Current Capability.
H
Recommended for LED Drive Application. G
DIM MILLIMETERS
B
J
E
A 4.70 MAX
B _
2.50 + 0.20
D C 1.70 MAX
D
D 0.45+0.15/-0.10
K
E 4.25 MAX
F F F _
1.50 + 0.10
MAXIMUM RATING (Ta=25 ) G 0.40 TYP
H 1.75 MAX
J 0.75 MIN
CHARACTERISTIC SYMBOL RATING UNIT K 0.5+0.10/-0.05
1 2 3
Collector-Base Voltage VCBO 160 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 1 A
Base Current IB 0.5 A
SOT-89
PC 0.5
Collector Power Dissipation W
PC* 1
Junction Temperature Tj 150 Marking
Storage Temperature Range Tstg -55 150
Lot No.
hFE Rank
* : Mounted on ceramic substrate (250mm2 0.8t)
G2
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 160 - - V
DC Current Gain hFE (Note) VCE=5V, IC=200mA 160 - 320
VCE(sat)(1) IC=100mA, IB=10mA - 0.05 0.1 V
Collector-Emitter Saturation Voltage
VCE(sat)(2) IC=500mA, IB=50mA - - 1.5 V
Base-Emitter Voltage VBE VCE=5V, IC=5mA 0.45 - 0.75 V
Transition Frequency fT VCE=5V, IC=200mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 15 - pF
Note : hFE Classification Y(2) : 160~320
2010. 6. 24 Revision No : 2 1/3
KTC4380
I C - V CE I C - V BE
1.0 1.0
15 10 COMMON
COMMON
COLLECTOR CURRENT IC (A)
6
COLLECTOR CURRENT I C (A)
EMITTER EMITTER
0.8 Ta=25 C 0.8 VCE =5V
4
Ta=0 C
3
C
0.6
C
0.6
Ta=25
00
2.5
Ta=1
0.4 2 0.4
1.5
1
0.2 0.2
I B =0.5mA
0
0 0
0 4 8 12 16 20 24 28 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V)
h FE - I C h FE - I C
500 500
COMMON EMITTER
300 300 Ta=100 C
DC CURRENT GAIN h FE
DC CURRENT GAIN h FE
Ta=25 C
Ta=25 C
Ta=0 C
10
100
5
100
VC
E
=2
V
50 50
COMMON EMITTER
VCE =10V
VCE =5V
20 20
10 30 50 100 300 1k 10 30 50 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
0.5 0.5
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
0.3 0.3
Ta=25 C I C /IB =10
VOLTAGE V CE(sat) (V)
VOLTAGE VCE(sat) (V)
0.1 0.1
Ta=100 C
I C /I B =10
0.05 0.05 Ta=25 C
IC /I B =5 Ta=0 C
0.03 0.03
0.01 0.01
5 10 30 100 300 1k 5 10 30 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2010. 6. 24 Revision No : 2 2/3
KTC4380
fT - IC C ob - V CB
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
500 100
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON EMITTER
300 f=1MHz
Ta=25 C 50
Ta=25 C
30
VCE =5V
100
VCE =2V
50 10
30
5
10 2
2 5 10 30 100 400 1 3 5 10 30 50 100 200
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V)
SAFE OPERATING AREA P C - Ta
COLLECTOR POWER DISSIPATION PC (W)
3k 1.2
I C MAX(PULSE) * 1 MOUNTED ON CERAMIC
1 SUBSTRATE
1m
I C MAX(CONTI- 10
m
COLLECTOR CURRENT I C (mA)
1k 1.0 (250mm 2 x0.8t)
S *
NUOUS) S
500 * 2 Ta=25 C
300 10 0.8
DC 0m
OP S
ER *
100 AT 0.6 2
IO
50 N
30 0.4
10 0.2
* SINGLE NONREPETITIVE
5 PULSE
3 CURVES MUST BE DERATED
0
LINEARLY WITH INCREASE 0 20 40 60 80 100 120 140 160
IN TEMPERATURE
1 AMBIENT TEMPERATURE Ta ( C)
0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V)
2010. 6. 24 Revision No : 2 3/3
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