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SEMICONDUCTOR KTC5001D/L
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Collector Saturation Voltage.
: VCE(sat)=0.13V(Typ.) at (IC=4A, IB=0.05A) A I
C
Large Collector Current J
DIM MILLIMETERS
: IC=10A(dc) IC=15A(10ms, single pulse)
D
A _
6.60 + 0.2
B _
6.10 + 0.2
Complementary to KTA1834D/L. C _ 0.2
5.0 +
_
D 1.10 + 0.2
B
E _
2.70 + 0.2
F _
2.30 + 0.1
APPLICATION H 1.00 MAX
M
Q
K
_
E
I 2.30 + 0.2
O
J _
0.5 + 0.1
Low Frequency Power Amplifier. H P K _
2.00 + 0.20
L _
0.50 + 0.10
F F L _
M 0.91+ 0.10
O _
0.90 + 0.1
1 2 3 _
P 1.00 + 0.10
Q 0.95 MAX
1. BASE
MAXIMUM RATING (Ta=25 ) 2. COLLECTOR
3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 30 V
DPAK
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 6 V
IC 10 A I
Collector Current A C J
ICP 15
D
Base Current IB 2 A DIM MILLIMETERS
B
A _
6.60 + 0.2
B _
6.10 + 0.2
Collector Power Ta=25 1.0 _
5.0 + 0.2
Q
C
K
PC W P
D 1.10 +_ 0.2
Dissipation Tc=25 10
H
G
E _
9.50 + 0.6
_
E
F 2.30 + 0.1
G _
0.76 + 0.1
Junction Temperature Tj 150 H 1.0 MAX
I _
2.30 + 0.2
J _
0.5 + 0.1
Storage Temperature Range Tstg -55 150 F F L K _
2.0 + 0.2
L _
0.50 + 0.1
P _
1.0 + 0.1
1 2 3 Q 0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V - - 1.0 A
Collector-Base Breakdown Voltage BVCBO IC=50 A 30 - - V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 6 - - V
hFE(1) (Note) VCE=2V, IC=0.5A 120 - 390
DC Current Gain
hFE(2) VCE=2V, IC=4.0A 82 - -
Collector Emitter Saturation Voltage VCE(sat) IC=4.0A, IB=0.05A - 0.13 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=4A, IB=0.05A - 0.9 1.2 V
Transition Frequency fT VCE=5V, IE=-1.5A, f=50MHz - 150 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 220 - pF
Note : hFE(1) Classification Y:120~270, GR:180~390.
2003. 3. 27 Revision No : 5 1/3
KTC5001D/L
I C - V BE I C - V CE
10 10
VCE =2V Ta=25 C 45mA 40mA
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
35mA
A
8
m
1 30mA
50
25mA
5 C 6
40 C
C
20mA
0.1
125
Ta=2
Ta=-
15mA
Ta=
4
10mA
0.01
2 5mA
I B =0mA
0.001 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2
COLLECTOR EMITTER VOLTAGE V BE (V) COLLECTOR EMITTER VOLTAGE V CE (V)
h FE - I C VCE(sat) - I C
2K -1K
Ta=25 C Ta=25 C
DC CURRENT GAIN h FE
1K
COLLECTOR SATURATION
VOLTAGE VCE(sat) (mV)
-300
500
300 V CE =5V -100
-30 I C /I B =80
2V
1V 50
100
-10 20
50
30 -3
-0.01 -0.1 -1 -10 -20 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
fT - IE C ob - V CB
1K 1K
COLLECTOR OUTPUT CAPACITANCE
TRANSITION FREQUENCY f T (MHz)
Ta=25 C Ta=25 C
500 VCE =5V f=1MHz
f=50MHz 500 I E =0A
300
300
C ob (pF)
100
50
100
30
50
10 30
-0.01 -0.03 -0.1 -0.3 -1 -3 0.1 0.3 1 3 10 30
EMITTER CURRENT I E (A) COLLECTOR BASE VOLTAGE V CB (V)
2003. 3. 27 Revision No : 5 2/3
KTC5001D/L
SAFE OPERATING AREA
Pc - Ta 30
COLLECTOR POWER DISSIPATION Pc (W)
I C MAX(PULSE) *
12
1 Tc=25 C 10
I C MAX
COLLECTOR CURRENT I C (A)
1
10
10 2 Ta=25 C (CONTINUOUS)
10
mS
0m
3 DC
S*
*
8 OP
ER
1 AT
6 IO
N
Tc
0.3 =2
5
4 C
0.1
2 * SINGLE NONREPETITIVE
2
PULSE Tc=25 C
0.03
CURVES MUST BE DERATED
0
LINEARLY WITH INCREASE
0 25 50 75 100 125 150
0.01
AMBIENT TEMPERATURE Ta ( C) 0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27 Revision No : 5 3/3
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