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ktc5027


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                                    SEMICONDUCTOR                                                                         KTC5027
                                            TECHNICAL DATA                                                     TRIPLE DIFFUSED NPN TRANSISTOR


  HIGH VOLTAGE AND HIGH RELIABILITY
  HIGH SPEED SWITCHING, WIDE SOA




  MAXIMUM RATING (Ta=25                )
          CHARACTERISTIC                        SYMBOL             RATING           UNIT
   Collector-Base Voltage                        VCBO               1100                V
   Collector-Emitter Voltage                     VCEO                800                V
   Emitter-Base Voltage                          VEBO                 7                 V
                               DC                 IC                  3
   Collector Current                                                                    A
                               Pulse              ICP                10
   Base Current                                   IB                 1.5                A
   Collector Power Dissipation
                                                  PC                 50                 W
              (Tc=25   )
   Junction Temperature                           Tj                 150
   Storage Temperature Range                     Tstg              -55 150




  ELECTRICAL CHARACTERISTICS (Ta=25                            )
              CHARACTERISTIC                      SYMBOL                                TEST CONDITION                   MIN.   TYP.   MAX.   UNIT
   Collector Cut-off Current                            ICBO         VCB=800V, IE=0                                       -      -      10     A
   Emitter Cut-off Current                              IEBO         VEB=5V, IC=0                                         -      -      10     A
                                                                     IC=1.5A, IB1=-IB2=0.3A
   Collector-Emitter Sustaning Voltage             VCEX(SUS)                                                             800     -       -     V
                                                                     L=2mH, Clamped
   Collector-Emitter Saturation Voltage             VCE(sat)         IC=1.5A, IB=0.3A                                     -      -      2      V
   Base-Emitter Saturation Voltage                  VBE(sat)         IC=1.5A, IB=0.3A                                     -      -      1.5    V
                                                 hFE (1) (Note)      VCE=5V, IC=0.2A                                      15     -      40
   DC Current Gain
                                                    hFE (2)          VCE=5V, IC=1A                                        8      -       -
  Collector-Base Breakdown Voltage                  BVCBO            IC=1mA, IE=0                                        1100    -       -     V
  Collector-Emitter Breakdown Voltage               BVCEO            IC=5mA, RBE=                                        800     -       -     V
  Emitter-Base Breakdown Voltage                    BVEBO            IE=1mA, IC=0                                         7      -       -     V
   Collector Output Capacitance                         Cob          VCB=10V, f=1MHz, IE=0                                -      60      -     pF
   Transition Frequency                                  fT          VCE=10V, IC=0.2A                                     -      15      -    MHz

                                                                                                             OUTPUT
                           Turn On Time                 ton                      20



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