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                                    SEMICONDUCTOR                                                                       KTC5027F
                                           TECHNICAL DATA                                                     TRIPLE DIFFUSED NPN TRANSISTOR


  HIGH VOLTAGE AND HIGH RELIABILITY
  HIGH SPEED SWITCHING, WIDE SOA




  MAXIMUM RATING (Ta=25                )
          CHARACTERISTIC                     SYMBOL               RATING           UNIT
   Collector-Base Voltage                     VCBO                 1100                V
   Collector-Emitter Voltage                  VCEO                  800                V
   Emitter-Base Voltage                       VEBO                   7                 V
                               DC              IC                    3
   Collector Current                                                                   A
                               Pulse           ICP                  10
   Base Current                                IB                   1.5                A
   Collector Power Dissipation
                                               PC                   40                 W
              (Tc=25   )
   Junction Temperature                        Tj                   150
   Storage Temperature Range                  Tstg                -55 150




  ELECTRICAL CHARACTERISTICS (Ta=25                           )
              CHARACTERISTIC                   SYMBOL                                  TEST CONDITION                   MIN.   TYP.   MAX.   UNIT
   Collector Cut-off Current                         ICBO           VCB=800V, IE=0                                       -      -      10     A
   Emitter Cut-off Current                           IEBO           VEB=5V, IC=0                                         -      -      10     A
                                                                    IC=1.5A, IB1=-IB2=0.3A
   Collector-Emitter Sustaning Voltage          VCEX(SUS)                                                               800     -       -     V
                                                                    L=2mH, Clamped
   Collector-Emitter Saturation Voltage            VCE(sat)         IC=1.5A, IB=0.3A                                     -      -      2      V
   Base-Emitter Saturation Voltage                 VBE(sat)         IC=1.5A, IB=0.3A                                     -      -      1.5    V
                                              hFE (1) (Note)        VCE=5V, IC=0.2A                                      15     -      40
   DC Current Gain
                                                   hFE (2)          VCE=5V, IC=1A                                        8      -       -
  Collector-Base Breakdown Voltage                 BVCBO            IC=1mA, IE=0                                        1100    -       -     V
  Collector-Emitter Breakdown Voltage              BVCEO            IC=5mA, RBE=                                        800     -       -     V
  Emitter-Base Breakdown Voltage                   BVEBO            IE=1mA, IC=0                                         7      -       -     V
   Collector Output Capacitance                      Cob            VCB=10V, f=1MHz, IE=0                                -      60      -     pF
   Transition Frequency                               fT            VCE=10V, IC=0.2A                                     -      15      -    MHz

                                                                                                            OUTPUT
                           Turn On Time              ton                        20

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