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SEMICONDUCTOR KTC5242
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
A Q B
K
FEATURES
F
I
High Collector Voltage : VCEO=230V(Min.)
E
Complementary to KTA1962.
C
DIM MILLIMETERS
Recommended for 80W High Fidelity Audio Frequency A 15.9 MAX
J
H
B 4.8 MAX
Amplifier Output Stage. C _
20.0 + 0.3
G
D _
2.0 + 0.3
D d 1.0+0.3/-0.25
E 2.0
L
F 1.0
G 3.3 MAX
d
MAXIMUM RATING (Ta=25 ) H
I
9.0
4.5
P P T J 2.0
CHARACTERISTIC SYMBOL RATING UNIT M
K 1.8 MAX
L _
20.5 + 0.5
Collector-Base Voltage VCBO 230 V M 2.8
P _
5.45 + 0.2
Collector-Emitter Voltage VCEO 230 V 1 2 3 Q 3.2 + 0.2
_
T 0.6+0.3/-0.1
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current IC 15 A 3. EMITTER
Base Current IB 1.5 A
Collector Power Dissipation (Tc=25 ) PC 130 W
TO-3P(N)
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=230V, IE=0 - - 5.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 5.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 230 - - V
hFE (1) (Note) VCE=5V, IC=1A 55 - 160
DC Current Gain
hFE (2) VCE=5V, IC=7A 35 60 -
Collector-Emitter Saturation Voltage VCE(sat) IC=8A, IB=0.8A - 0.4 3.0 V
Base-Emitter Voltage VBE VCE=5V, IC=7A - 1.0 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 200 - pF
Note : hFE(1) Classification R:55 110 , O:80 160
2004. 8. 19 Revision No : 1 1/3
KTC5242
I C - V CE I C - V BE
12 12
300 200
COMMON EMITTER
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
10 VCE =5V
140
100
9
8
80
6 60 6
C
C
C
100
-25
40
25
4
Ta=
Ta=
Ta=
I B =20mA 3
2
COMMON EMITTER
Ta=25 C
0 0
0 2 4 6 8 10 12 14 16 0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1k 1
COMMON EMITTER COMMON EMITTER
500 VCE =5V 0.5 I C /IB =10
DC CURRENT GAIN h FE
300 0.3
VOLTAGE VCE(sat) (V)
Ta=100 C
Ta=25 C
100 0.1 5 C
=-2
Ta
50 0.05
Ta=-25 C Ta=25 C
30 0.03
Ta=100 C
10 0.01
5 0.005
3 0.003
0.01 0.03 0.1 0.3 1 3 10 20 0.01 0.03 0.1 0.3 1 3 10 20
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
VBE(sat) - I C fT - IC
10 100
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER
BASE-EMITTER SATURATION
5 I C /IB =10 50
VOLTAGE VBE(sat) (V)
3 30
1 Ta=-25 C
10
0.5
Ta=100 C 5
0.3 Ta=25 C 3
0.1 COMMON EMITTER
1 VCE =5V
0.05 Tc=25 C
0.03 0.5
0.01 0.03 0.1 0.3 1 3 10 20 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
2004. 8. 19 Revision No : 1 2/3
KTC5242
Pc - Ta r th - t w
TRANSIENT THERMAL RESISTANCE
160
COLLECTOR POWER DISSIPATION
CURVES SHOULD BE APPLIED IN
Tc=Ta
THERMAL LIMITED AREA.
INFINITE HEAT SINK (SINGLE NONREPETITIVE PULSE)
120 1 INFINITE HEAT SINK
2 NO HEAT SINK
50
r th ( C/W)
2
PC (W)
80 10
1
1
40
0.1
0 0.01
0 40 80 120 160 200 0.001 0.01 0.1 1 10 100 1k
AMBIENT TEMPERATURE Ta ( C) PULSE WIDTH t w (s)
SAFE OPERATING AREA
50
I C MAX(PULSED)
30 1m
I C MAX 10 s*
(CONTINUOUS) ms
*
COLLECTOR CURRENT IC (A)
10
0m
10 DC s*
OP
5 Tc ER
=2 AT
5
3 C ION
1
0.5
0.3 * SINGLE NONREPETITIVE
VCEO MAX
PULSE Tc=25 C
0.1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.05 IN TEMPERATURE
0.03
3 5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE V CE (V)
2004. 8. 19 Revision No : 1 3/3
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