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SEMICONDUCTOR KTC8550S
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE E
Complementary to KTC8050S. L B L
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base Voltage VCBO -35 V P P
L 0.55
M 0.20 MIN
Collector-Emitter Voltage VCEO -30 V N 1.00+0.20/-0.10
P 7
N
C
J
Emitter-Base Voltage VEBO -5 V
M
K
Collector Current IC -800 mA
Emitter Current IE 800 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC * 350 mW 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BL
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.5mA, IE=0 -35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -30 - - V
hFE(1) (Note) VCE=-1V, IC=-50mA 100 - 300
DC Current Gain
hFE(2) VCE=-1V, IC=-350mA 60 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-1V, IC=-500mA - - -1.2 V
Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 19 - pF
Note : hFE(1) Classification C : 100 200, D : 150 300
2003. 3. 25 Revision No : 1 1/2
KTC8550S
I C - V CE h FE - I C
-1k 2k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 1k VCE =-1V
DC CURRENT GAIN h FE
-800 -8
-7 500
-6
300
-600 -5 Ta=100 C
-4
Ta=25 C
-400 100
-3 Ta=-25 C
-2 50
-200 30
IB =-1mA
0
0 10
0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - VBE
-3 -1k
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON
COLLECTOR CURRENT I C (mA)
-500 EMITTER
I C /I B =25
-300 VCE =-1V
-1
-0.5 -100
VCE(sat) (V)
-0.3 -50
25 C
C
C
-30 100
-25
Ta=
Ta=
Ta=
-0.1
-10
-0.05 Ta=100 C
-0.03 Ta=25 C -5
Ta=-25 C -3
-0.01 -1
-1 -3 -10 -30 -100 -300 -1k -0.2 -0.4 -0.6 -0.8 -1.0
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
Pc - Ta
500
COLLECTOR POWER DISSIPATION
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
400 2 Ta=25 C
1
Pc (mW)
300
200
2
100
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25 Revision No : 1 2/2
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