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SEMICONDUCTOR KTC801F
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
B
Thin fine pitch super mini 6pin.
B1
Excellent temperature response between these 2 transistor. DIM MILLIMETERS
_
High pairing property in hFE. A 1.0 + 0.05
A1 _
0.7 + 0.05
1 6
The follwing characteristics are common for Q1, Q2.
C
B _
1.0 + 0.05
A1
_
A
B1 0.8 + 0.05
2 5 C 0.35
C
D _
0.15 + 0.05
D
H 0.38+0.02/-0.04
3 4 _
T 0.1 + 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
1. Q 1 EMITTER
2. Q 1 BASE
Collector-Base Voltage VCBO 60 V
H
3. Q 2 COLLECTOR
T
4. Q 2 EMITTER
Collector-Emitter Voltage VCEO 50 V 5. Q 2 BASE
6. Q 1 COLLECTOR
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
TFS6
Collector Power Dissipation PC * 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Rating
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.30 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note : hFE Classification Y(4):120 240, GR(6):200 400
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
6 5 4 Type Name
6 5 4
hFE Rank
Q1 Q2
Q
1 2 3 1 2 3
2005. 12. 6 Revision No : 0 1/3
KTC801F
I C - VCE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
6.0mA 5.0mA
Ta=25 C
200 500
DC CURRENT GAIN h FE
3.0mA 2.0mA
300
Ta=100 C VCE =5V
160
Ta=25 C
1.0mA Ta=-25 C
120 100
0.5mA 50
80
I B =0.2mA
30
VCE =1V
40
0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
COLLECTOR-EMITTER SATURATION
1 10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B=10 I C /I B=10
0.5 5
VOLTAGE VCE(sat) (V)
Ta=25 C
VOLTAGE VBE(sat) (V)
0.3 3
C
0.1 10
0 1
=
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA)
fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON
VCE =10V EMITTER
1k
BASE CURRENT I B (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo