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SEMICONDUCTOR KTC801U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
FEATURES B1
A super-minimold package houses 2 transistor.
1 6 DIM MILLIMETERS
Excellent temperature response between these 2 transistor. A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
High pairing property in hFE. B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
The follwing characteristics are common for Q1, Q2.
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H _
0.9 + 0.1
H
T T 0.15+0.1/-0.05
MAXIMUM RATING (Ta=25 ) G
CHARACTERISTIC SYMBOL RATING UNIT
1. Q 1 EMITTER
Collector-Base Voltage VCBO 60 V 2. Q 1 BASE
3. Q 2 COLLECTOR
VCEO 4. Q 2 EMITTER
Collector-Emitter Voltage 50 V 5. Q 2 BASE
6. Q 1 COLLECTOR
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA
Base Current IB 30 mA
US6
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150 EQUIVALENT CIRCUIT (TOP VIEW)
Storage Temperature Range Tstg -55 150 6 5 4
* Total Rating
Q1 Q2
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-EmitterSaturation Voltage VCE(sat) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note : hFE Classification Y(4):120 240, GR(6):200 400
Marking 6 5 4
Lot No.
L4
Type Name
1 2 3
2008. 9. 23 Revision No : 3 1/3
KTC801U
I C - VCE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
6.0mA 5.0mA
COLLECTOR CURRENT I C (mA)
Ta=25 C
200 500
3.0mA
DC CURRENT GAIN h FE
2.0mA
300
Ta=100 C VCE =6V
160
Ta=25 C
1.0mA Ta=-25 C
120 100
0.5mA 50
80
I B =0.2mA
30
VCE =1V
40
0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1 10
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B=10 I C /I B=10
0.5 5
VOLTAGE VCE(sat) (V)
Ta=25 C
VOLTAGE VBE(sat) (V)
0.3 3
C
0.1 10
0 1
=
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA)
fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON
VCE =10V EMITTER
1k
BASE CURRENT I B (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo