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SEMICONDUCTOR KTC815
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW FREQUENCY AMPLIFIER
B C
FEATURES
Collector-Base Voltage : VCBO=60V.
A
Complementary to KTA539.
DIM MILLIMETERS
N A 4.70 MAX
E B 4.80 MAX
K
G C 3.70 MAX
D D 0.45
E 1.00
J
F 1.27
G 0.85
MAXIMUM RATING (Ta=25 ) H 0.45
J _
14.00 + 0.50
H K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT
F F L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO 60 V N 1.00
Collector-Emitter Voltage VCEO 45 V 1 2 3
C
L
M
Emitter-Base Voltage VEBO 5 V 1. EMITTER
2. BASE
Collector Current IC 200 mA 3. COLLECTOR
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=45V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=1V, IC=50mA 70 - 240
Base-Emitter Voltage VBE VCE=1V, IC=10mA 0.6 0.65 0.9 V
Collector-Emitter Saturation Voltage VCE(sat) IC=150mA, IB=15mA - 0.15 0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=150mA, IB=15mA - 0.83 1.1 V
Transition Frequency fT VCE=10V, IC=10mA 100 200 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4 - pF
Note : hFE Classification O:70~140, Y:120~240
2003. 3. 5 Revision No : 0 1/2
KTC815
I C - VCE h FE - I C
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