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SEMICONDUCTOR KTC945
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
A
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
Low Noise : NF=1dB(Typ.). at f=1kHz N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTA733. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO 60 V N 1.00
C
1 2 3
L
M
Collector-Emitter Voltage VCEO 50 V 1. EMITTER
2. COLLECTOR
Emitter-Base Voltage VEBO 5 V 3. BASE
Collector Current IC 150 mA
Collector Power Dissipation PC 625 mW
TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A, IC=0 5 - - V
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=6V, IC=2mA 90 - 600
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=10mA 80 300 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification R:90 180, Q:135 270, P:200 400, K:300 600
2001. 9. 14 Revision No : 2 1/2
KTC945
I C - VCE h FE - I C
240 1k
COMMON COMMON
5.0
COLLECTOR CURRENT IC (mA)
6.0 EMITTER 500
200 3.0 EMITTER
DC CURRENT GAIN h FE
2.0 Ta=25 C
300
VCE =6V
160 Ta=100 C
Ta=25 C
1.0 Ta=-25 C
120 100
80 0.5 50
30
VCE =1V
40 I B=0.2mA
0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
V CE(sat) - I C f T - IE
COLLECTOR-EMITTER SATURATION
3 3k
TRANSITION FREQUENCY f T (MHz)
COMMON COMMON EMITTER
EMITTER VCE =10V
I C /I B =10
VOLTAGE VCE(sat) (V)
1 1k Ta=25 C
0.5 500
0.3 300
0.1 100
0.05 Ta=100 C
50
0.03 25 C 30
-25 C
0.01 10
0.1 0.3 1 3 10 30 100 300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I C (mA) EMITTER CURRENT I E (mA)
I B - V BE Pc - Ta
3k 700
COLLECTOR POWER DISSIPATION
COMMON
1k EMITTER 600
BASE CURRENT I B (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo