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SEMICONDUCTOR KTC9013
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity.
A
Complementary to KTC9012.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO 40 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO 30 V M 0.45 MAX
N 1.00
1 2 3
C
Emitter-Base Voltage VEBO 5 V
L
M
Collector Current IC 500 mA 1. EMITTER
2. BASE
IE 3. COLLECTOR
Emitter Current -500 mA
625
Collector Power Dissipation PC* mW
400 TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=1V, IC=50mA 64 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE IC=100mA, VCE=1V 0.8 1.0 V
Transition Frequency fT VCB=6V, IC=20mA, f=100MHz 140 - - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification D:64 91, E:78 112, F:96 135, G:118 166, H:144 202, I:176 246
2010. 6. 25 Revision No : 2 1/1
KTC9013
IC - VCE hFE - IC
(LOW VOLTAGE REGION)
500 500
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
300
DC CURRENT GAIN hFE
Ta=25 C
400 4.0 Ta =100 C VCE =6V
6.0 3.0
Ta =25 C
C
300 2.0 Ta =-25
100
VCE =1V
200 50
1.0
30
100 0.5
I B =0.1mA COMMON EMITTER
0 10
0 1 2 3 4 5 0.5 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC IB - VBE
COLLECTOR-EMITTER SATURATION
1 2K
COMMON EMITTER COMMON
I C /I B =10 1K EMITTER
BASE CURRENT IB (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo