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SEMICONDUCTOR KTC9014
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
A
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz. N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTC9015. G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO 60 V 3
N 1.00
1 2
C
L
M
Collector-Emitter Voltage VCEO 50 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO 5 V 3. COLLECTOR
Collector Current IC 150 mA
Emitter Current IE -150 mA
TO-92 (F)
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE (Note) VCE=5V, IC=1mA 60 - 1000
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1mA, f=100MHz 60 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
Noise Figure NF VCE=6V, IC=0.1mA, Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification A:60 150, B:100 300, C:200 600, D:400 1000
2011. 4. 4 Revision No : 3 1/1
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