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SEMICONDUCTOR KTC9015
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
A
: hFE(IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz. N DIM MILLIMETERS
E A 4.70 MAX
K
Complementary to KTC9014. G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
MAXIMUM RATING (Ta=25 ) H J _
14.00 + 0.50
F F K 0.55 MAX
CHARACTERISTIC SYMBOL RATING UNIT L 2.30
M 0.45 MAX
Collector-Base Voltage VCBO -50 V N 1.00
C
1 2 3
L
M
Collector-Emitter Voltage VCEO -50 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO -5 V 3. COLLECTOR
Collector Current IC -150 mA
Emitter Current IE 150 mA
TO-92
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -50 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
DC Current Gain hFE (Note) VCE=-5V, IC=-1mA 60 - 600
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1mA, f=100MHz 60 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 4.0 7.0 pF
Noise Figure NF VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz - 1.0 10 dB
Note : hFE Classification A:60 150, B:100 300, C:200 600
1994. 5. 11 Revision No : 0 1/1
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