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SEMICONDUCTOR KTC9018S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
Small Reverse Transfer Capacitance A _
2.93 + 0.20
: Cre=0.65pF(Typ.). B 1.30+0.20/-0.15
C 1.30 MAX
Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz.
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
High Transition Frequency : fT=800MHz(Typ.).
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
MAXIMUM RATING (Ta=25 ) P 7
N
C
J
CHARACTERISTIC SYMBOL RATING UNIT
M
K
Collector-Base Voltage VCBO 40 V
1. EMITTER
Collector-Emitter Voltage VCEO 30 V
2. BASE
Emitter-Base Voltage VEBO 4 V 3. COLLECTOR
Collector Current IC 20 mA
Emitter Current IE -20 mA
SOT-23
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BG
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=5V, IC=1mA 54 - 198
Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 - - 1.0 pF
Transition Frequency fT VCE=10V, IC=8mA, f=100MHz 500 800 - MHz
Collector-Base Time Constant CC rbb' VCE=6V, IE=-1mA, f=30MHz - - 30 pS
Noise Figure NF - - 4.0
VCE=6V, IE=-1mA, f=100MHz dB
Power Gain Gpe 15 - -
Note : hFE Classification F:54 80, G:72 108, H:97 146, I:130 198
2003. 3. 25 Revision No : 1 1/3
KTC9018S
STATIC CHARACTERISTICS h FE - I C
300
20 500 COMMON EMITTER
COLLECTOR CURRENT
450
400 VCE =6V
DC CURRENT GAIN h FE
16 350
300 Ta=25 C
I C (mA)
250 100
12
VCE =6V 200
8 150
100 50
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