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SEMICONDUCTOR KTD1411
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE DARLINGTON TRANSISTOR. A
B D
FEATURES C
E
High DC Current Gain : hFE=3000(Min.)
F
(VCE=2V, IC=1A)
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
E 3.5
Collector-Base Voltage VCBO 80 V _
F 11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO 60 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO 10 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
Collector Current IC 4 A M _
2.3 + 0.1
N _
0.65 + 0.15
Base Current IB 0.5 A 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Collector Power Dissipation (Tc=25 ) PC 15 W 3. BASE
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 20 A
Emitter Cut-off Current IEBO VEB=10V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 60 - - V
hFE(1) VCE=2V, IC=1A 3000 - -
DC Current Gain
hFE(2) VCE=2V, IC=3A 1000 - -
Collector-Emitter VCE(sat) IC=3A, IB=30mA - - 1.5
Saturation Voltage V
Base-Emitter VBE(sat) IC=3A, IB=30mA - - 2.0
2003. 7. 24 Revision No : 2 1/2
KTD1411
h FE - I C VCE(sat) - I C
30k 2.0
SATURATION VOLTAGE VCE(sat) (V)
VCE =2V COMMON EMITTER
1.8
I C /I B =100
DC CURRENT GAIN h FE
1.6
10k 1.4
1.2
5k
1.0
3k
0.8
0.6
0.4
1k
0.2
500 0
0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
I C - V BE 10
I C MAX.(PULSED)*
4
100
COLLECTOR CURRENT I C (A)
VCE =3V 5 I C MAX.(CONTINUOUS)
COLLECTOR CURRENT I C (A)
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