Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktd1691
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SEMICONDUCTOR KTD1691
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
A
LARGE CURRENT B D
C
E
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 ) F
Complementary to KTB1151. G
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
MAXIMUM RATING (Ta=25 ) C 0.7
D _
3.2 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT E 3.5
F _
11.0 + 0.3
Collector-Base Voltage VCBO 60 V G 2.9 MAX
M
H 1.0 MAX
Collector-Emitter Voltage VCEO 60 V J 1.9 MAX
O K _
0.75 + 0.15
N P
_
Emitter-Base Voltage VEBO 7 V 1 2 3 L 15.50 + 0.5
M _
2.3 + 0.1
_
0.65 + 0.15
DC IC 5 N
O 1.6
Collector Current A 1. EMITTER
P 3.4 MAX
Pulse * ICP 8 2. COLLECTOR
3. BASE
Base Current IB 1 A
Collector Power Ta=25 1.5 TO-126
PC W
Dissipation Tc=25 20
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* PW 10ms, Duty Cycle 50%
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A
hFE 1 VCE=1V, IC=0.1A 60 - -
DC Current Gain * hFE2 (Note) VCE=1V, IC=2A 160 - 400
hFE 3 VCE=2V, IC=5A 50 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.1 0.3 V
Base-Emitter Saturation Voltage * VBE(sat) IC=2A, IB=0.2A - 0.9 1.2 V
OUTPUT
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