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SEMICONDUCTOR KTD1824E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
E
High foward current transfer ratio hFE. B
Low collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS
A _
1.60 + 0.10
High emitter to base voltage VEBO. 2
D
B _
0.85 + 0.10
G
_
A
Low noise voltage NV. C 0.70 + 0.10
3
H
1 D 0.27+0.10/-0.05
ESM type package, allowing downsizing of the equipment and E _
1.60 + 0.10
G _
1.00 + 0.10
automatic insertion through the tape packing and the magazine H 0.50
_
packing. J 0.13 + 0.05
J
C
MAXIMUM RATINGS (Ta=25 ) 1. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT 2. BASE
3. COLLECTOR
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 15 V
DC IC 50 ESM
Collector Current mA
Pulse ICP 100
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
Type Name
L h FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=20V, IE=0 - - 100 nA
Collector Cut-off Current
ICEO VCE=20V, IB=0 - - 1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 50 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 15 V
DC Current Gain hFE (Note) VCE=10V, IC=2mA 400 1000 2000
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - 0.05 0.2 V
Transition Frequency fT VCB=10V, IE=-2mA, f=200MHz - 120 - MHz
Note : hFE Classification A:400~800, B:600~1200, C:1000~2000
2001. 10. 23 Revision No : 0 1/3
KTD1824E
2001. 10. 23 Revision No : 0 2/3
KTD1824E
2001. 10. 23 Revision No : 0 3/3
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