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SEMICONDUCTOR KTD1863
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
B D
FEATURES
High Breakdown Voltage and High Current
: VCEO=80V, IC=1A.
A
Low VCE(sat) P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
Complementary to KTB1241. C
B 5.20 MAX
C 0.60 MAX
S
G
Q D 2.50 MAX
K E 1.15 MAX
F 1.27
J
R
G 1.70 MAX
F F H 0.55 MAX
MAXIMUM RATING (Ta=25 ) J _
14.00 + 0.50
K 0.35 MIN
H H H
CHARACTERISTIC SYMBOL RATING UNIT L _
0.75 + 0.10
M E M M 4
Collector-Base Voltage VCBO 100 V N 25
O 1.25
D
1 2 3 L
Collector-Emitter Voltage VCEO 80 V H
O
P 1.50
N N Q 0.10 MAX
Emitter Base Voltage VEBO 5 V 1. EMITTER
R _
12.50 + 0.50
S 1.00
Collector Current IC 1 A 2. COLLECTOR
3. BASE
Emitter Current IE -1 A
Collector Power Dissipation PC 1 W TO-92L
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 1 A
Emitter-Cut-off Current IEBO VEB=4V, IC=0 - - 1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 80 - - V
DC Current Gain hFE (Note) VCE=3V, IC=500mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.4 V
Transition Frequency fT VCE=10V, IC=50mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
1998. 8. 21 Revision No : 1 1/2
KTD1863
I C - V BE I C - V CE
1000
COLLECTOR CURRENT I C (mA)
Ta=25 C Ta=25 C
COLLECTOR CURRENT I C (A)
VCE =5V 1.0 6mA
5mA
100 0.8 4mA
3mA
10 0.6
2mA
0.4
1 1mA
0.2
0.1 I B =0mA
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0
0 2 4 6 8 10
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR-EMITTER VOLTAGE V CE (V)
h FE - I C
V CE(sat) - I C
1000 Ta=25 C
Ta=25 C
DC CURRENT GAIN h FE
COLLECTOR SATURATION
2.0
VCE =3V VOLTAGE VCE(sat) (V) 1.0
100 0.5
0.2
VCE =1V I C /I B=20/1
0.1
0.05
I C /I B =10/1
0.02
0
0 10 100 1000
0.01
COLLECTOR CURRENT I C (mA) 0 10 100 1000
COLLECTOR CURRENT I C (mA)
fT - IE
TRANSITION FREQUENCY f T (MHz)
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
1000 Cob - V CB
Ta=25 C
500 VCE =-5V
1000 Ta=25 C
200
f=1MHz
100 I E =0A
50 I C =0A
100
20
10
5
2 10
1
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT I C (mA) 1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR-BASE VOLTAGE VCB (V)
SAFE OPERATION AREA
10
COLLECTOR CURRENT I C (A)
5 *Single nonrepetitive pulse
Ta=25 C
2 I C Max. (Pulse) Pw
1 DC =1
0m
500m Pw s
=10
0m
200m s
100m
50m
20m
10m
5m
2m
1m
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR-EMITTER VOLTAGE V CE (V)
1998. 8. 21 Revision No : 1 2/2
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