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SEMICONDUCTOR KTD1898
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES A
C
1W (Mounted on Ceramic Substrate).
H
Small Flat Package. G
Complementary to KTB1260.
B
J
E
DIM MILLIMETERS
A 4.70 MAX
D D B _
2.50 + 0.20
K C 1.70 MAX
MAXIMUM RATING (Ta=25 ) F F
D 0.45+0.15/-0.10
E 4.25 MAX
_
CHARACTERISTIC SYMBOL RATING UNIT F 1.50 + 0.10
G 0.40 TYP
VCBO H 1.75 MAX
Collector-Base Voltage 100 V 1 2 3
J 0.75 MIN
K 0.5+0.10/-0.05
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current IC 1 A
3. EMITTER
Emitter Current IE -1 A
PC 500 mW
Collector Power Dissipation
PC* 1 W SOT-89
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Mounted on ceramic substrate (250mm 2
0.8t)
Marking
h FE Rank Lot No.
Type Name
Z
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 80 - - V
DC Current Gain hFE(Note) VCE=3V, IC=500mA 70 - 400
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.4 V
Transition Frequency fT VCE=10V, IC=50mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 20 - pF
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
2003. 7. 3 Revision No : 1 1/3
KTD1898
I C - VBE I C - V CE
1000
Ta=25 C Ta=25 C
COLLECTOR CURRENT I C (mA)
1.0 6mA
COLLECTOR CURRENT I C (mA)
VCE =5V
5mA
100 0.8 4mA
3mA
0.6
10
2mA
0.4
1 1mA
0.2
I B =0mA
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C VCE(sat) - I C
1K
Ta=25 C Ta=25 C
2.0
COLLECTOR SATURATION
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
300 1.0
VCE =3V 0.5
100 0.2
I C /I B=20/1
0.1
VCE =1V
30 0.05 I C /I B =10/1
0.02
10 0.01
0 10 100 1K 0 10 100 1000
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
f T - IE C ob - VCB
COLLECTOR OUTPUT CAPACITANCE C ob (pF)
1K 1000
TRANSITION FREQUENCY f T (MHz)
Ta=25 C Ta=25 C
500 VCE =-5V f=1MHz
I E =0A
200 I C =0A
100 100
50
20
10 10
5
2
1 1
1 2 5 10 20 50 100 200 500 1K 0.1 0.2 0.5 1 2 5 10 20 50 100
EMITTER CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)
2003. 7. 3 Revision No : 1 2/3
KTD1898
SAFE OPERATING AREA Pc - Ta
COLLECTOR POWER DISSIPATION Pc (W)
3 1.2
I C (Pulse) MAX. *
1 MOUNTED ON CERAMIC
1 SUBSTRATE
1 1.0
COLLECTOR CURRENT I C (A)
I C MAX. Pw (250mm 2 x0.8t)
(CONTINUOUS) 10 =1 2 Ta=25 C
0m 0m
300m S* s* 0.8
DC
OP
ER
100m AT 0.6
IO 2
N
30m 0.4
* SINGLE NONREPETITVE
10m 0.2
PULSE Ta=25 C
CURVES MUST BE DERATED
3m 0
LINEARLY WITH INCREASE
0 20 40 60 80 100 120 140 160
IN TEMPERATURE
1m AMBIENT TEMPERATURE Ta ( C)
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 7. 3 Revision No : 1 3/3
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