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                                   SEMICONDUCTOR                                                                KTD1028
                                            TECHNICAL DATA                                         EPITAXIAL PLANAR NPN TRANSISTOR


  HIGH CURRENT APPLICATION.

  FEATURES
    High DC Current Gain
       : hFE=800 3200 (VCE=5.0V, IC=300mA).
    Wide Area of Safe Operation.
    Low Collector Saturation Voltage.
       : VCE(sat)=0.17V (IC=500mA, IB=5.0mA).




  MAXIMUM RATING (Ta=25                 )
              CHARACTERISTIC                SYMBOL            RATING          UNIT
   Collector-Base Voltage                    VCBO                   60         V
   Collector-Emitter Voltage                 VCEO                   50         V
   Emitter-Base Voltage                      VEBO                   8          V
   Collector Current                           IC                1.0           A
   Base Current                                IB                200           mA
   Collector Power Dissipation                 PC                   1          W
   Junction Temperature                        Tj                150
   Storage Temperature Range                  Tstg            -55       150




  ELECTRICAL CHARACTERISTICS (Ta=25 )
               CHARACTERISTIC                       SYMBOL                      TEST CONDITION            MIN.    TYP.   MAX.   UNIT
   Collector Cut-off Current                           ICBO              VCB=60V, IE=0                      -      -     100    nA
   Emitter Cut-off Current                             IEBO              VEB=8V, IC=0                       -      -     100    nA
                                                   hFE(1) (Note)         VCE=5.0V, IC=300mA                800    1500   3200
   DC Current Gain
                                                      hFE(2)             VCE=5.0V, IC=1.0A                 400     -       -
   Collector-Emitter Saturration Voltage              VCE(sat)           IC=500mA, IB=5.0mA                 -     0.17   0.30    V
   Base-Emitter Saturation Voltage                    VBE(sat)           IC=500mA, IB=5.0mA                 -     0.80    1.2    V
   Collector Output Capacitance                         Cob              VCB=10V, IE=0, f=1.0MHz            -      18     30     pF
   Transition Frequency                                 fT               VCE=10V, IC=500mA                 150    250      -    MHz
   Base-Emitter Voltage                                VBE               VCE=5V, IC=100mA                   -     630    700    mV
  Note: hFE Classification     A:800 1600,   B:1200 2400,               C:2000 3200




2008. 3. 11                      Revision No : 3                                                                                       1/2
                                KTD1028




2008. 3. 11   Revision No : 3             2/2

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