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SEMICONDUCTOR KTD1047B
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
A
FEATURES N Q B
O K
Complementary to KTB817B.
DIM MILLIMETERS
Recommended for 60W Audio Frequency _
F
A 15.60 + 0.20
B _
4.80 + 0.20
Amplifier Output Stage. C _
19.90 + 0.20
C
J
R
D _
2.00 + 0.20
I
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
MAXIMUM RATING (Ta=25 ) E I _
12.76 + 0.20
J _
23.40 + 0.20
CHARACTERISTIC SYMBOL RATING UNIT
L
d M K 1.5+0.15-0.05
L _
16.50 + 0.30
Collector-Base Voltage VCBO 160 V M _
1.40 + 0.20
P P N _
13.60 + 0.20
T
Collector-Emitter Voltage VCEO 140 V O _
9.60 + 0.20
P _
5.45 + 0.30
Emitter-Base Voltage VEBO 6 V Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
DC IC 12 T 0.60+0.15-0.05
Collector Current A 1. BASE
Pulse ICP 15 2. COLLECTOR (HEAT SINK)
3. EMITTER
Collector Power Dissipation (Tc=25 ) PC 100 W
Junction Temperature Tj 150 TO-3P(N)-E
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 0.1 mA
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 mA
hFE (1) (Note) VCE=5V, IC=1A 60 - 200
DC Current Gain
hFE 2 VCE=5V, IC=6A 20 -
Collector-Emitter Saturation Voltage VCE(sat) IC=5A, IB=0.5A - - 2.5 V
Base-Emitter Voltage VBE(ON) VCE=5V, IC=1A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 15 - MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 210 - pF
Turn On Time ton VCC=20V - 0.26 -
Fall Time tf IC=1A=10 IB1=-10 IB2 - 0.68 - S
Storage Time tstg RL=20 - 6.88 -
Note : hFE(1) Classification O:60 120, Y:100 200
2011. 3. 18 Revision No : 0 1/3
KTD1047B
I C - V CE h FE - I C
10 1k
240mA VCE =5V
500
COLLECTOR CURRENT IC (A)
200mA
160mA 300
8
120mA
DC CURRENT h FE
80mA 100
6
50
30
40mA
4
10
20mA 5
2
3
I B =0
0 1
0 10 20 30 40 50 0.1 0.3 1 3 10 30 100
COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A)
VCE(sat) - I C V BE(sat) - I C
10 10
COLLECTOR-EMITTER VOLTAGE
IC /I B =10 I C /I B =10
BASE-EMITTER SATURATION
5 5
3
VOLTAGE VBE(sat) (V)
3
1
VCE(sat) (V)
0.5
0.3 1
0.5
0.1
0.05 0.3
0.03
0.01 0.1
0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
I C - VBE f T - IC
100
TRANSITION FREQUENCY f T (MHz)
8
VCE =5V VCE =5V
COLLECTOR CURRENT I C (A)
7 50
6 30
5
4 10
3 5
2 3
1
0 1
0 0.4 0.8 1.2 1.6 0.1 0.3 0.5 1 3 5 10
BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A)
2011. 3. 18 Revision No : 0 2/3
KTD1047B
C ob - V CB SAFE OPERATING AREA
COLLECTOR OUTPUT CAPACITANCE
1k 100
f=1MHz
COLLECTOR CURRENT I C (A)
50
500 30
300
1m S
10
10
10 0m
S
m
S
DC
C ob (pF)
5
100 3
50 1
30 0.5
0.3
10 0.1
1 3 10 30 100 1 3 10 30 100 300 1k
COLLECTOR-BASE VOLTAGE V CB (V) COLLECTOR-EMITTER VOLTAGE V CE (V)
2011. 3. 18 Revision No : 0 3/3
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