Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktd2686
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SEMICONDUCTOR KTD2686
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
DARLINGTON TRANSISTOR.
SOLENOID DRIVER. MOTOR DRIVER.
A
C
FEATURES
H
High DC Current Gain G
: hFE=2000(Min.) (VCE=2V, IC=1A)
B
J
E
DIM MILLIMETERS
A 4.70 MAX
D D B _
2.50 + 0.20
MAXIMUM RATINGS (Ta=25 )
K C 1.70 MAX
D 0.45+0.15/-0.10
CHARACTERISTIC SYMBOL RATING UNIT F F
E 4.25 MAX
F _
1.50 + 0.10
Collector-Base Voltage VCBO 50 V G 0.40 TYP
VCEO 1 2 3 H 1.75 MAX
Collector-Emitter Voltage 60 10 V
J 0.75 MIN
Emitter-Base Voltage VEBO 8 V K 0.5+0.10/-0.05
DC IC 1
Collector Current A 1. BASE
Pulse ICP 3 2. COLLECTOR (HEAT SINK)
Base Current IB 0.5 A 3. EMITTER
Collector Power t=10S 2.5
PC * W
Dissipation DC 1
Junction Temperature Tj 150 SOT-89
Storage Temperature Range Tstg -55 150
* Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 )
EQUIVALENT CIRCUIT COLLECTOR
Marking
Lot No.
BASE
A2
Type Name 5k
- 300
-
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=45V, IE=0 - - 10 A
Collector Cut-off Current
ICEO VCE=45V, IB=0 - - 10 A
Emitter Cut-off Current IEBO VEB=8V, IC=0 0.8 - 4 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 50 60 70 V
DC Current Gain hFE VCE=2V, IC=1A 2000 - -
VCE(sat)1 IC=0.5A, IB=1mA - - 1.2
Collector-Emitter Saturation Voltage V
VCE(sat)2 IC=1A, IB=1mA - - 1.5
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=1mA - - 2.0 V
VCC =30V
Turn On Time ton - 0.4 -
30
OUTPUT
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