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SEMICONDUCTOR KTD2059
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Complementary to KTB1367. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
CHARACTERISTIC SYMBOL RATING UNIT
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
Collector-Base Voltage VCBO 100 V M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Emitter Voltage VCEO 100 V P _
6.8 + 0.1
Q _
4.5 + 0.2
Emitter-Base Voltage VEBO 5 V R _
2.6 + 0.2
N N H S 0.5 Typ
Collector Current IC 5 A
Base Current IB 0.5 A
1. BASE
Q
Collector Power Dissipation (Tc=25 ) PC 30 W 1 2 3
2. COLLECTOR
Junction Temperature Tj 150 3. EMITTER
Storage Temperature Range Tstg -55 150
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) (Note) VCE=5V, IC=1A 40 - 240
DC Current Gain
hFE(2) VCE=5V, IC=4A 20 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=4A, IB=0.4A - - 2.0 V
Base-Emitter Voltage VBE VCE=5V, IC=1A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A - 12 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 100 - pF
Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240
2007. 5. 22 Revision No : 2 1/2
KTD2059
I C - VCE VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
5.0 2
0 200 COMMON EMITTER
30 0 150
COLLECTOR CURRENT I C (A)
25 I C /I B =10
100 1
VOLTAGE VCE(sat) (V)
4.0
C
0.5
75
=
3.0
Tc
50 0.3
2.0 Tc=25 C
I B =20mA Tc=-25 C
COMMON EMITTER 0.1
1.0
Tc=25 C
0.05
0
0 0.03
0 1.0 2.0 3.0 4.0 5.0 6.0 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
h FE - I C SAFE OPERATING AREA
500 20
300 I C MAX.(PULSED) *
DC CURRENT GAIN h FE
10
COLLECTOR CURRENT I C (A)
1mS
10m S *
I C MAX.
10
(CONTINUOUS)
0m
S *
5
*
Tc=75 C 1s
100 3 DC *
Tc=25 C OP
Tc ER
50 Tc=-25 C =2 AT
5 IO
C N
30 1
VCEO MAX.
0.5
COMMON EMITTER
* SINGLE NONREPETITIVE
VCE =5V 0.3 PULSE Tc=25 C
10
CURVES MUST BE DERATED
0.01 0.03 0.1 0.3 1 3 10 LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR CURRENT IC (A) 0.1
2 5 10 30 100 300
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Pc - Ta
50
COLLECTOR POWER DISSIPATION
Tc=Ta
INIFINITE HEAT SINK
40
PC (W)
30
20
10
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( C)
2007. 5. 22 Revision No : 1 2/2
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