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SEMICONDUCTOR KTD882
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
AUDIO FREQUENCY POWER AMPLIFIER
A
LOW SPEED SWITCHING B D
C
E
FEATURES
Complementary to KTB772. F
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
Collector-Base Voltage VCBO 40 V E 3.5
_
F 11.0 + 0.3
Collector-Emitter Voltage VCEO 30 V M
G
H
2.9 MAX
1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO 5 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.5 + 0.5
DC IC 3 M _
2.3 + 0.1
Collector Current A N _
0.65 + 0.15
Pulse (Note) ICP 7 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Base Current (DC) IB 0.6 A 3. BASE
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 10 TO-126
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note : Pulse Width 10mS, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=30V, IE=0 - - 1 A
Emitter-Cut-off Current IEBO VEB=3V, IC=0 - - 1 A
hFE(1) VCE=2V, IC=20mA 30 150 -
DC Current Gain *
hFE(2) (Note) VCE=2V, IC=1A 100 160 400
Collector-Emitter Saturation Voltage * VCE(sat) IC=2A, IB=0.2A - 0.3 0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=2V, IB=0.2A - 1.0 2.0 V
Current Gain Bandwidth Product fT VCE=5V, IC=0.1A - 90 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 45 - pF
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400
2003. 6. 16 Revision No : 4 1/3
KTD882
I C - V CE h FE - I C
2.0 1K
COLLECTOR CURRENT I C (A)
500
I B=10mA
DC CURRENT GAIN h FE
1.6 300
I B=9mA VCE =2V
I B=8mA
100
1.2 IB=7mA
I B=6mA 50
I B=5mA 30
0.8
I B=4mA
10
I B=3mA
0.4 5
I B=2mA 3
I B=1mA
0 1
0 4 8 12 16 20 1 3 5 10 30 50 100 300 1K 3K 5K
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
CURRENT GAIN BANDWIDTH PRODUCT f T (MHz)
SATURATION VOLTAGE VCE(sat), V BE(sat) (mV)
V CE(sat) ,VBE(sat) - I C fT - IC
1K 1K
VBE (sat)
500
500 300
300
VCE =5V
100 100
50
50 30
30 VCE (sat)
10 10
5
5 3
3
I C /IB =10
1 1
1 3 10 30 100 300 1K 3K 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A)
C ob - V CB SAFE OPERATING AREA
1K 10
COLLECTOR CURRENT I C (A)
10
f=1MHz 5 I C MAX.
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