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SEMICONDUCTOR KTH2369/A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH SPEED SWITCHING APPLICATION.
FEATURES B C
High Frequency Characteristics
: fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).
A
Excellent Switching Characteristics.
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45
J
E 1.00
MAXIMUM RATING (Ta=25 ) F 1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _
14.00 + 0.50
Collector-Base Voltage VCBO 40 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCEO 15 V M 0.45 MAX
N 1.00
Emitter-Base Voltage VEBO 4.5 V 1 2 3
C
L
M
Collector Current IC 500 mA 1. COLLECTOR
2. BASE
Collector Power Dissipation (Ta=25 ) PC 625 mW 3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=20V, IE=0 - - 0.4
Collector Cut-off Current ICBO A
VCB=20V, IE=0, Ta=125 - - 30
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 40 - -
Collector-Emitter Breakdown Voltage * V(BR)CEO IE=10mA, IB=0 15 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 4.5 - -
KTH2369/A IC=10mA, VCE=1.0V 40 - 120
KTH2369 IC=10mA, VCE=1.0V, Ta=-55 20 - -
DC Current *
KTH2369A hFE IC=10mA, VCE=0.35V, Ta=-55 20 - -
Gain
KTH2369 IC=100mA, VCE=2.0V 20 - -
KTH2369A IC=100mA, VCE=1.0V 20 - -
Collector-Emitter Saturation Voltage * VCE(sat) IC=10mA, IB=1.0mA - - 0.25 V
Base-Emitter Saturation Voltage * VBE(sat) IC=10mA, IB=1.0mA 0.70 - 0.85 V
Transition Frequency fT IC=10mA, VCE=10V, f=100MHz 500 - - MHz
Collector Output Capacitance Cob VCB=5.0V, IE=0, f=1.0MHz - - 4.0 pF
Storage Time tstg IC=100mA, IB1=-IB2=10mA, VCC=10V - - 13
VCC=3.0V, IC=10mA,
Turn-on Time ton - - 12
IB1=3.0mA, IB2=-1.5mA nS
IC=10mA, IB1=3.0mA
Turn-off Time toff - - 15
IB2=-1.5mA, VCC=3.0V
Note : *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2002. 6. 17 Revision No : 2 1/2
KTH2369/A
h FE - I C VCE(sat) - I C
200 0.5
COLLECTOR-EMITTER SATURATION
VCE =1V COMMON EMITTER
I C /I B =10
DC CURRENT GAIN h FE
0.4
VOLTAGE VCE(sat) (V)
150
Ta=125 C
0.3
100
Ta=25 C
0.2
Ta=125 C
Ta=-40 C
50
0.1 Ta=25 C
Ta=-40 C
0 0
0.01 0.1 1 10 100 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C C ob - V CB , C ib - V EB
COLLECTOR OUTPUT CAPACITANCE Cob(pF)
COLLECTOR INPUT CAPACITANCE C ib(pF)
1.5 5.0
COMMON EMITTER COMMON
BASE-EMITTER SATURATION
I C /I B =10 EMITTER
1.3 f=1MHz
4.0
VOLTAGE VBE(sat) (V)
C ibo Ta=25 C
1.1
3.0
0.9
Ta=-40 C Cobo
Ta=25 C 2.0
0.7
Ta=125 C 1.0
0.5
0.3 0
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1.0 3.0 10 30 50
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V)
EMITTER-BASE VOLTAGE V EB (V)
I C - V BE P C - Ta
30 700
COLLECTOR POWER DISSIPATION
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE =1V 600
10
5 500
3
P C (W)
400
5 C
25 C
0 C
1 300
Ta=2
Ta=-4
Ta=1
0.5 200
0.3
100
0.1 0
0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 175
BASE-EMITTER VOLTAGE V BE (V) AMBIENT TEMPERATURE Ta ( C)
2002. 6. 17 Revision No : 2 2/2
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