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SEMICONDUCTOR KTJ6131V
P CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES E
2.5 Gate Drive.
B
Low Threshold Voltage : Vth=-0.5 -1.5V.
High Speed.
DIM MILLIMETERS
Small Package. 2
A _
1.2 +0.05
D
G
A
Enhancement-Mode. B _
0.8 +0.05
H
1 3 _
C 0.5 + 0.05
K
D _
0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
P P H 0.40
J _
0.12 + 0.05
MAXIMUM RATING (Ta=25 ) K _
0.2 + 0.05
P 5
CHARACTERISTIC SYMBOL RATING UNIT
C
J
Drain-Source Voltage VDS -30 V 1. SOURCE
Gate-Source Voltage VGSS 20 V 2. GATE
3. DRAIN
DC Drain Current ID -50 mA
Drain Power Dissipation PD 100 mW
Tch VSM
Channel Temperature 150
Storage Temperature Range Tstg -55 150
Marking
EQUIVALENT CIRCUIT
D
Type Name
M1
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=-100 A, VGS=0V -30 - - V
Drain Cut-off Current IDSS VDS=-30V, VGS=0V - - -1 A
Gate Threshold Voltage Vth VDS=-3V, ID=-0.1mA -0.5 - -1.5 V
Forward Transfer Admittance |Yfs| VDS=-3V, ID=-10mA 15 - - mS
Drain-Source ON Resistance RDS(ON) ID=-10mA, VGS=-2.5V - 20 40
Input Capacitance Ciss VDS=-3V, VGS=0V, f=1MHz - 10.4 - pF
Reverse Transfer Capacitance Crss VDS=-3V, VGS=0V, f=1MHz - 2.8 - pF
Output Capacitance Coss VDS=-3V, VGS=0V, f=1MHz - 8.4 - pF
Turn-on Time ton - 0.15 - S
Switching Time VDD=-3V, ID=-10mA, VGS=0 -2.5V
Turn-off Time toff - 0.13 - S
2011. 7. 12 Revision No : 0 1/3
KTJ6131V
2011. 7. 12 Revision No : 0 2/3
KTJ6131V
2011. 7. 12 Revision No : 0 3/3
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