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SEMICONDUCTOR KTJ6131E
P CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES
B
2.5 Gate Drive. DIM MILLIMETERS
A _
1.60 + 0.10
Low Threshold Voltage : Vth=-0.5 -1.5V. 2
D
B _
0.85 + 0.10
_
High Speed.
G
A
C 0.70 + 0.10
1 3
H
D 0.27+0.10/-0.05
Small Package. E _
1.60 + 0.10
G _
1.00 + 0.10
Enhancement-Mode. H 0.50
J _
0.13 + 0.05
J
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT 1. SOURCE
VDS 2. GATE
Drain-Source Voltage -30 V
3. DRAIN
Gate-Source Voltage VGSS 20 V
DC Drain Current ID -50 mA
Drain Power Dissipation PD 100 mW
ESM
Channel Temperature Tch 150
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
D
Marking
G
Type Name
EB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=-100 A, VGS=0V -30 - - V
Drain Cut-off Current IDSS VDS=-30V, VGS=0V - - -1 A
Gate Threshold Voltage Vth VDS=-3V, ID=-0.1mA -0.5 - -1.5 V
Forward Transfer Admittance |Yfs| VDS=-3V, ID=-10mA 15 - - mS
Drain-Source ON Resistance RDS(ON) ID=-10mA, VGS=-2.5V - 20 40
Input Capacitance Ciss VDS=-3V, VGS=0V, f=1MHz - 10.4 - pF
Reverse Transfer Capacitance Crss VDS=-3V, VGS=0V, f=1MHz - 2.8 - pF
Output Capacitance Coss VDS=-3V, VGS=0V, f=1MHz - 8.4 - pF
Turn-on Time ton - 0.15 - S
Switching Time VDD=-3V, ID=-10mA, VGS=0 -2.5V
Turn-off Time toff - 0.13 - S
2003. 6. 23 Revision No : 0 1/3
KTJ6131E
I D - VDS
I D - V DS (LOW VOLTAGE REGION)
-50 -1.0
-2.5V -2.4V COMMON SOURCE -2.5V -1.3V COMMON SOURCE
Ta=25 C Ta=25 C
DRAIN CURRENT I D (mA)
DRAIN CURRENT I D (mA)
-40 -0.8
-2.2V -1.2V
-30 -0.6
-2.0V -1.15V
-20 -1.8V -0.4 -1.1V
-1.6V -1.05V
-10 -0.2
-1.4V -1.0V
VGS =-1.2V VGS =-0.9V
0 0
0 -2 -4 -6 -8 -10 0 -0.1 -0.2 -0.3 -0.4 -0.5
DRAIN-SOURCE VOLTAGE V DS (V) GATE-SOURCE VOLTAGE VDS (V)
I DR - VDS I D - V GS
-50 -50
DRAIN REVERSE CURRENT I DR (mA)
-30 -30 COMMON SOURCE
COMMON SOURCE
VDS =-3V
DRAIN CURRENT I D (mA)
-10 VGS =0 -10
-3 -3
D Ta=100 C
-1 -1
I DR Ta=25 C
G
-0.3 -0.3 Ta=-25 C
S
-0.1 -0.1
-0.03 -0.03
-0.01 -0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 -1 -2 -3 -4 -5
DRAIN-SOURCE VOTAGE V DS (V) GATE-SOURCE VOTAGE VGS (V)
Y fs - ID C - VDS
100 50
FORWARD TRANSFER ADMITTANCE
COMMON SOURCE
VDS =-3V
30
CAPACITANCE C (pF)
50 Ta=25 C
C iss
30 10
Y fs (mS)
Coss
5
3
C rss
COMMON SOURCE
10
VGS =0
1 f=1MHz
Ta=25 C
5 0.5
-1 -3 -5 -10 -30 -50 -100 -0.1 -0.3 -0.5 -1 -3 -5 -10 -20
DRAIN CURRENT I D (mA) DRAIN-SOURCE VOLTAGE V DS (V)
2003. 6. 23 Revision No : 0 2/3
KTJ6131E
VDS(ON) - I D t - ID
-3K 1K
COMMON SOURCE
DRAIN-SOURCE ON VOLTAGE
VGS =-2.5V 500
SWITCHING TIME t (ns)
-1K Ta=25 C
300 t off
-500
VDS(ON) (mV)
-300 tf
t on
100 tr
-100
50 VDD =-3V
VOUT
-50 D.U. < 1%
30 0
V IN =
-30 -2.5V VIN :t r , t f < 5ns
RL
(Z OUT =50)
50
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