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                                     SEMICONDUCTOR                                                                   KTK211
                                                                                                      N CHANNEL JUNCTION FIELD
                                              TECHNICAL DATA                                             EFFECT TRANSISTOR

  HIGH FREQUENCY APPLICATION.
  VHF BAND AMPLIFIER APPLICATION.
                                                                                                                                  E
                                                                                                                        L         B           L
  FEATURES                                                                                                                                             DIM    MILLIMETERS
                                                                                                                                                        A             _
                                                                                                                                                                 2.93 + 0.20
    Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
                                                                                                                                                        B     1.30+0.20/-0.15
    High Forward Transfer Admittance.                                                                                                                   C        1.30 MAX




                                                                                                                                                  D
                                                                                                                        2                     3         D     0.40+0.15/-0.05
               : |yfs| =9mS(Typ.)




                                                                                                  A

                                                                                                       G
                                                                                                                                                        E     2.40+0.30/-0.20




                                                                                                               H
                                                                                                                        1                               G            1.90
    Extremely Low Reverse Transfer Capacitance.
                                                                                                                                                        H            0.95
               : Crss=0.1pF(Typ.)                                                                                                                       J     0.13+0.10/-0.05
                                                                                                                                                        K       0.00 ~ 0.10
                                                                                                  Q
                                                                                                                                                        L            0.55
                                                                                                                            P             P
                                                                                                                                                        M        0.20 MIN
                                                                                                                                                        N     1.00+0.20/-0.10




                                                                                                               N
                                                                                                           C
                                                                                                                                                        P             7




                                                                                                                                                  J
                                                                                                                                                        Q         0.1 MAX
  MAXIMUM RATING (Ta=25                   )




                                                                                                                            K
                                                                                                                                      M


              CHARACTERISTIC                  SYMBOL                RATING    UNIT
                                                VGDO                                                                            1. GATE
   Gate-Drain Voltage                                                 -18      V
                                                                                                                                2. DRAIN
   Gate Current                                   IG                  10       mA                                               3. SOURCE

   Drain Power Dissipation                        PD                  150     mW
   Junction Temperature                           Tj                  150
                                                                                                                                SOT-23
   Storage Temperature Range                     Tstg               -55 150




                                                                                                      Marking
                                                                                                           I DSS Rank                                        Lot No.


                                                                                                  Type Name
                                                                                                                            K


  ELECTRICAL CHARACTERISTICS (Ta=25                             )
               CHARACTERISTIC                     SYMBOL                       TEST CONDITION                      MIN.               TYP.            MAX.       UNIT
   Gate Leakage Current                                 IGSS           VGS=-0.5V, VDS=0                             -                     -           -10          nA
   Gate-Drain Breakdown Voltage                       V(BR)GDO         IG=-100 A                                   -18                    -             -           V
   Drain Current                                  IDSS (Note)          VGS=0, VDS=10V                              1.0                    -            15          mA
   Gate-Source Cut-off Voltage                        VGS(OFF)         VDS=10V, ID=1 A                             -0.4                   -           -4.0          V
   Foward Transfer Admittance                           |yfs|          VDS=10V, VGS=0, f=1kHz                       -                     9             -          mS
   Reverse Transfer Capacitance                         Crss           VGD=-10V, f=1MHz                             -                 0.10            0.15         pF
   Power Gain                                           GPS            VDD=10V, f=100MHz (Fig.)                     -                  18               -          dB
   Noise Figure                                         NF             VDD=10V, f=100MHz (Fig.)                     -                 2.5              3.5         dB

  Note : IDSS Classification    O:1.0 3.0, Y:2.5 6.0,
                                GR(G):5.0 10.0, BL(B):9.0 15.0



2003. 2. 25                         Revision No : 2                                                                                                                       1/3
                                                        KTK211

 Fig. 100MHz GPS, NF TEST CIRCUIT




                   INPUT                                               D                            10pF   OUTPUT
                                                                       S                                      RL=50
              R g =50                                      G
                           10pF
                                                        0.005

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