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SEMICONDUCTOR KTK5132V
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
E
FEATURES B
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5 1.5V.
2 DIM MILLIMETERS
High Speed. A _
1.2 + 0.05
D
G
A
B _
0.8 + 0.05
Small Package. 1
H
3 C _
0.5 + 0.05
Enhancement-Mode. _
K
D 0.3 + 0.05
E _
1.2 + 0.05
G _
0.8 + 0.05
P P H 0.40
J _
0.12 + 0.05
MAXIMUM RATING (Ta=25 ) K _
0.2 + 0.05
P 5
CHARACTERISTIC SYMBOL RATING UNIT
C
J
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGSS 20 V 1. SOURCE
2. GATE
DC Drain Current ID 100 mA 3. DRAIN
Drain Power Dissipation PD 100 mW
Channel Temperature Tch 150
VSM
Storage Temperature Range Tstg -55 150
EQUIVALENT CIRCUIT
D
Marking
G Type Name
KB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS= 16V, VDS=0V - - 1 A
Drain-Source Breakdown Voltage V(BR)DSS ID=100 A, VGS=0V 30 - - V
Drain Cut-off Current IDSS VDS=30V, VGS=0V - - 1 A
Gate Threshold Voltage Vth VDS=3V, ID=0.1mA 0.5 - 1.5 V
Forward Transfer Admittance |Yfs| VDS=3V, ID=10mA 25 - - mS
Drain-Source ON Resistance RDS(ON) ID=10mA, VGS=2.5V - 4 7
Input Capacitance Ciss VDS=3V, VGS=0V, f=1MHz - 8.5 - pF
Reverse Transfer Capacitance Crss VDS=3V, VGS=0V, f=1MHz - 3.3 - pF
Output Capacitance Coss VDS=3V, VGS=0V, f=1MHz - 9.3 - pF
Turn-on Time ton - 50 - nS
Switching Time VDD=5V, ID=10mA, VGS=0 5V
Turn-off Time toff - 180 - nS
2003. 7. 4 Revision No : 0 1/3
KTK5132V
I D - V DS
I D - V DS (LOW VOLTAGE REGION)
100 1.0
2.5V COMMON SOURCE 2.5V 1.2V COMMON
Ta=25 C SOURCE
DRAIN CURRENT ID (mA)
DRAIN CURRENT I D (mA)
1.15V Ta=25 C
80 2.2V 0.8
60 2.0V 0.6
1.1V
40 1.8V 0.4
1.05V
1.6V
20 0.2 1.0V
1.4V
VGS =1.2V VGS =0.9V
0 0
0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE V DS (V)
I DR - VDS I D - VGS
100 100
DRAIN REVERSE CURRENT I DR (mA)
COMMON SOURCE
30 COMMON SOURCE 30 V DS =3V
DRAIN CURRENT ID (mA)
VGS =0
10 10
Ta=25 C
3 3
C
100
1 D 1
Ta=
Ta=25 C
0.3 G I DR 0.3
Ta=-25 C
0.1 S 0.1
0.03 0.03
0.01 0.01
0 -0.4 -0.8 -1.2 -1.6 0 1 2 3 4 5
DRAIN-SOURCE VOTAGE V DS (V) GATE-SOURCE VOTAGE VGS (V)
Y fs - ID C - V DS
300 100
FORWARD TRANSFER ADMITTANCE
COMMON SOURCE COMMON SOURCE
V DS =3V 50 VGS =0
f=1MHz
CAPACITANCE C (pF)
Ta=25 C 30
100 Ta=25 C
C oss
(mS)
50 C iss
10
30
fs
Y
5
3
C rss
10
5 1
1 3 5 10 30 50 100 0.1 0.3 0.5 1 3 5 10 20
DRAIN CURRENT I D (mA) DRAIN-SOURCE VOLTAGE VDS (V)
2003. 7. 4 Revision No : 0 2/3
KTK5132V
VDS(ON) - I D t - ID
2 1K
COMMON SOURCE
DRAIN-SOURCE ON VOLTAGE
1 VGS =2.5V 500
SWITCHING TIME t (ns)
0.5 Ta=25 C
300
0.3 t on
VDS(ON) (V)
tr
0.1 100 t off
tf
0.05 50 VDD =5V
ID VOUT
0.03 5V D.U. < 1%
=
30 V IN
VIN :t r , t f < 5ns
0
RL
(Z OUT =50)
50
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