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SEMICONDUCTOR KTK951S
N CHANNEL JUNCTION FIELD
TECHNICAL DATA EFFECT TRANSISTOR
LOW FREQUENCY /
HIGH FREQUENCY AMPLIFIER APPLICATION
E
L B L
FEATURES
DIM MILLIMETERS
Low Gain Controlled Amplifier A _
2.93 + 0.20
B 1.30+0.20/-0.15
High Transter Admittance C 1.30 MAX
D
2 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
J
Q 0.1 MAX
Maximum Ratings (Ta=25 )
K
M
CHARACTERISTIC SYMBOL RATING UNIT
1. SOURCE
Gate-Drain Voltage VGDO -22 V
2. DRAIN
Gate-Source Voltage VGSO -22 V 3. GATE
Gate Current IG 10 mA
Drain Current ID 50 mA
SOT-23
Drain Power Dissipation PD 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
Marking
IDSS Rank Lot No.
Type Name
J
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage V(BR)GSS VDS=0V, IG=-10 -22 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=10 0 - -2.5 V
Gate Leakage Currnet IGSS VDS=0V, VGS=-15V - - 10 nA
Drain Current IDSS(Note) VDS=5V, VGS=0V 12 - 40 mA
Forward Transfer Admittance yfs VDS=5V, VGS=0V, f=1kHz 20 30 - mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz - 9 - pF
Note : IDSS Classification C : 12~22, D : 18~30, E : 27~40
2009. 5. 15 Revision No : 0 1/3
KTK951S
2009. 5. 15 Revision No : 0 2/3
KTK951S
2009. 5. 15 Revision No : 0 3/3
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