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SEMICONDUCTOR KTK920T
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
RF Switching for VCR Tuner
FEATURES E
Low loss at on state(Typ 1dB@1GHz) B
DIM MILLIMETERS
With built-in bias diode A _
2.9 + 0.2
1 4
B 1.6+0.2/-0.1
C _
0.70 + 0.05
D _
0.4 + 0.1
F
A
E 2.8+0.2/-0.3
F _
1.9 + 0.2
2 3
G _
0.16 + 0.05
D
H 0.00-0.10
I 0.25+0.3/-0.15
J _
0.60 + 0.1
K _
0.55 + 0.1
K
C
I H I G
1. Diode Cathode
2. FET Gate & Diode Anode
3. FET Drain
4. FET Source
FET Maximum Ratings (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
TSQ
Drain-Source-Voltage VDS 3 V
Drain-Gate-Voltage VDG 7 V
EQUIVALENT CIRCUIT
Source-Gate-Voltage VSG 7 V
Drain Current ID 10 mA
DIODE Maximum Ratings (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage VR 35 V
Forword Current IF 100 mA
Marking
Lot No.
Type Name
FET DIODE Maximum Ratings (Ta=25 ) MA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC* 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
* Package mounted on a ceramic board (600 0.8 )
2007. 4. 24 Revision No : 1 1/3
KTK920T
FET ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage V(BR)GSS VDS=0, IGS=-0.1mA 7 - - V
Gate-Source Pinch-off Voltage VGS(OFF) VDS=1V, ID=20 A - -3 -4 V
Drain-Source Leakage Current IDSX VDS=2V, VGS=-5V - - 10 A
Gate Cut-off Current IGSS VDS=0, VGS=-5V - - -100 nA
Drain-Source On-State Resistance RDS(ON) VGS=0, ID=1mA - 12 20
VSC=VDC=0, RS=RL=50 , IF=0, f 1GHz - - 2 dB
Loss(On-State) S21(ON) 2 VSC=VDC=0, RS=RL=50 , IF=0, f=1GHz - 1.3 - dB
VSC=VDC=0, RS=RL=75 , IF=0, f 1GHz - - 3 dB
VSC=VDC=5V, RS=RL=50 , IF=1mA, f 1GHz 30 - - dB
Isolation (Off-State) S21(OFF) 2 VSC=VDC=5V, RS=RL=50 , IF=1mA, f= 1GHz - 38 - dB
VSC=VDC=5V, RS=RL=75 , IF=1mA, f 1GHz 30 - - dB
VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF
Input Capacitance Note1 Cic
VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF
VSC=VDC=5V, IF=1mA, f=1MHz - 1 - pF
Output Capacitance Note1 Coc
VSC=VDC=0, IF=0, f=1MHz - 0.65 - pF
Note : 1 Cic is the series connection of Csg and Cgc;
Coc is the series connection of Cdg and Cgc;
DIODE ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Forward Voltage VF IF=2mA - - 0.85 V
Reverse Current IR VR=15V - - 0.1
Reverse Voltage VR IR=1 35 - - V
Total Capacitance CT VR=6V, f=1MHz - 0.7 1.2 pF
Series Resistance rS IF=2mA, f=100MHz - 0.5 0.9
Fig. S21(on) 2 S21(off) 2
Test Circuit
V 1nF
100k
On-State : V=0V
Off-State : V=5V
47k
50 50
Input Output
1nF 1nF
4.7k
100k
1nF
V
2007. 4. 24 Revision No : 1 2/3
KTK920T
2 2
S21(ON) - f S21(OFF) - f
0 2 0
S21(OFF) VSC=VDC=5V, RS=RL=50 , IF = 1mA
2
S21(ON) (dB) Measured in test circuit (fig.)
(dB)
ISOLATION (OFF-STATE)
-1
-20
LOSS (ON-STATE)
-2
-40
-3
VSC=VDC=0V, RS=RL=50
IF = 0mA
Measured in test circuit (fig.)
-4 -60
0 400 800 1200 0 400 800 1200
FREQUENCY f (MHz) FREQUENCY f (MHz)
2007. 4. 24 Revision No : 1 3/3
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