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ktk920u


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                                SEMICONDUCTOR                                                 KTK920U
                                                                                          N CHANNEL MOS FIELD
                                        TECHNICAL DATA                                     EFFECT TRANSISTOR


 RF Switching for VCR/DVD/Set Top Box Tuner

 FEATURES
   Low loss at on state(Typ 1dB@1GHz)                                                         E
                                                                                          M   B       M
   With built-in bias diode
                                                                                      1                   4   D       DIM   MILLIMETERS
                                                                                                                       A            _
                                                                                                                               2.00 + 0.20
                                                                                                                                    _




                                                                              A
                                                                                                                       B       1.25 + 0.15




                                                                                  J
                                                                                                                       C            _
                                                                                                                               0.90 + 0.10
                                                                                      2                   3            D     0.3+0.10/-0.05
                                                                                                                       E            _
                                                                                                                               2.10 + 0.20
                                                                                                                       H     0.15+0.1/-0.06
                                                                                                                       J          1.30
                                                                                                                       K      0.00 ~ 0.10




                                                                                  C
                                                                                                              H        L          0.70




                                                                                      L
                                                                                                                       M          0.42
                                                                                          N           N                N       0.10 MIN
                                                                                              K



                                                                                  1. Diode Cathode
                                                                                  2. FET Gate & Diode Anode
                                                                                  3. FET Drain
                                                                                  4. FET Source

 FET Maximum Ratings (Ta=25            )
             CHARACTERISTIC                      SYMBOL     RATING    UNIT
                                                                                                      USQ
   Drain-Source-Voltage                              VDS        3      V
   Drain-Gate-Voltage                                VDG      7        V
                                                                             EQUIVALENT CIRCUIT
   Source-Gate-Voltage                               VSG      7        V
   Drain Current                                     ID       10      mA




 DIODE Maximum Ratings (Ta=25              )
             CHARACTERISTIC                      SYMBOL     RATING    UNIT
   Reverse Voltage                                   VR       35       V
   Forword Current                                   IF      100      mA              Marking
                                                                                                  4               3
                                                                                                                                 Lot No.


                                                                              Type Name
 FET DIODE Maximum Ratings (Ta=25                )                                                MA
             CHARACTERISTIC                      SYMBOL     RATING    UNIT
   Power Dissipation                                 PC      200      mW                          1               2


   Junction Temperature                              Tj      150
   Storage Temperature Range                         Tstg   -55~150




2008. 9. 8                     Revision No : 2                                                                                                1/3
                                                                              KTK920U

 FET ELECTRICAL CHARACTERISTICS (Ta=25                                          )
              CHARACTERISTIC                           SYMBOL                           TEST CONDITIONS                MIN   TYP    MAX    UNIT
   Gate-Source Breakdown Voltage                        V(BR)GSS         VDS=0, IGS=-0.1mA                              7     -      -      V
   Gate-Source Pinch-off Voltage                        VGS(OFF)         VDS=1V, ID=20 A                                -     -3     -4     V
   Drain-Source Leakage Current                           IDSX           VDS=2V, VGS=-5V                                -     -     10      A
   Gate Cut-off Current                                   IGSS           VDS=0, VGS=-5V                                 -     -     -100   nA
   Drain-Source On-State Resistance                     RDS(ON)          VGS=0, ID=1mA                                  -    12     20
                                                                         VSC=VDC=0, RS=RL=50    , IF=0, f   1GHz        -     -      2      dB
   Loss(On-State)                                       S21(ON) 2        VSC=VDC=0, RS=RL=50    , IF=0, f=1GHz          -    1.3     -      dB
                                                                         VSC=VDC=0, RS=RL=75    , IF=0, f   1GHz        -     -      3      dB
                                                                         VSC=VDC=5V, RS=RL=50      , IF=1mA, f 1GHz    30     -      -      dB
   Isolation (Off-State)                                S21(OFF) 2       VSC=VDC=5V, RS=RL=50      , IF=1mA, f= 1GHz    -    38      -      dB
                                                                         VSC=VDC=5V, RS=RL=75      , IF=1mA, f 1GHz    30     -      -      dB
                                                                         VSC=VDC=5V, IF=1mA, f=1MHz                     -     1      -      pF
   Input Capacitance Note1                                  Cic
                                                                         VSC=VDC=0, IF=0, f=1MHz                        -    0.65    -      pF
                                                                         VSC=VDC=5V, IF=1mA, f=1MHz                     -     1      -      pF
   Output Capacitance Note1                                 Coc
                                                                         VSC=VDC=0, IF=0, f=1MHz                        -    0.65    -      pF
 Note : 1 Cic is the series connection of Csg and Cgc;
          Coc is the series connection of Cdg and Cgc;


 DIODE ELECTRICAL CHARACTERISTICS (Ta=25                                            )
              CHARACTERISTIC                           SYMBOL                           TEST CONDITIONS                MIN   TYP    MAX    UNIT
   Forward Voltage                                          VF           IF=2mA                                         -     -     0.85    V
   Reverse Current                                            IR         VR=15V                                         -     -     0.1
   Reverse Voltage                                          VR           IR=1                                          35     -      -      V
   Total Capacitance                                        CT           VR=6V, f=1MHz                                  -    0.7    1.2     pF
   Series Resistance                                          rS         IF=2mA, f=100MHz                               -    0.5    0.9

 Fig. S21(on) 2   S21(off)   2
                                 Test Circuit
                                                  V     1nF



                                                       100k
                  On-State : V=0V
                  Off-State : V=5V
                                                      47k

         50                                                          50
         Input                                                       Output
                     1nF                                1nF




                                                      4.7k
                                                       100k




                                                        1nF
                                                  V




2008. 9. 8                                  Revision No : 2                                                                                      2/3
                                                                            KTK920U



                                                    2                                                                                             2
                                          S21(ON)       - f                                                                            S21(OFF)       - f

                              0                                                                                 2 0
                                                                                     S21(OFF)                          VSC=VDC=5V, RS=RL=50 , IF = 1mA
                          2
     S21(ON)                                                                           (dB)                            Measured in test circuit (fig.)

       (dB)                   -1




                                                                                        ISOLATION (OFF-STATE)
                                                                                                                -20
        LOSS (ON-STATE)




                              -2

                                                                                                                -40
                              -3
                                                 VSC=VDC=0V, RS=RL=50
                                                 IF = 0mA
                                                 Measured in test circuit (fig.)
                              -4                                                                                -60
                                   0    400               800                 1200                                 0                400                800   1200


                                       FREQUENCY f (MHz)                                                                         FREQUENCY f (MHz)




2008. 9. 8                                Revision No : 2                                                                                                           3/3



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