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SEMICONDUCTOR KTN2222/A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Low Leakage Current
A
: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.
Low Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. G B 4.80 MAX
D C 3.70 MAX
Complementary to the KTN2907/2907A. D 0.45
J
E 1.00
KTN2222/2222A Electrically Similar to 2N2222/2222A. F 1.27
G 0.85
H 0.45
H J _
14.00 + 0.50
F F K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1 2 3
C
L
M
1. EMITTER
MAXIMUM RATING (Ta=25 ) 2. BASE
3. COLLECTOR
RATING
CHARACTERISTIC SYMBOL UNIT
KTN2222 KTN2222A
Collector-Base Voltage VCBO 60 75 V TO-92
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 5 6 V
Collector Current IC 600 mA
Collector Power Dissipation
PC 625 mW
(Ta=25 )
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
2003. 6. 16 Revision No : 2 1/5
KTN2222/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current KTN2222A ICEX VCE=60V, VEB(OFF)=3V - - 10 nA
KTN2222 VCB=50V, IE=0 - - 0.01
Collector Cut-off Current ICBO A
KTN2222A VCB=60V, IE=0 - - 0.01
Emitter Cut-off Current KTN2222A IEBO VEB=3V, IC=0 - - 10 nA
KTN2222 60 - -
Collector-Base
V(BR)CBO IC=10 A, IE=0 V
Breakdown Voltage KTN2222A 75 - -
Collector-Emitter * KTN2222 30 - -
V(BR)CEO IE=10mA, IB=0 V
Breakdown Voltage KTN2222A 40 - -
Emitter-Base KTN2222 5 - -
V(BR)EBO IE=10 A, IC=0 V
Breakdown Voltage KTN2222A 6 - -
hFE(1) IC=0.1mA, VCE=10V 35 - -
KTN2222 hFE(2) IC=1mA, VCE=10V 50 - -
KTN2222A hFE(3) IC=10mA, VCE=10V 75 - -
DC Current Gain *
hFE(4) IC=150mA, VCE=10V 100 - 300
KTN2222 30 - -
hFE(5) IC=500mA, VCE=10V
KTN2222A 40 - -
KTN2222 - - 0.4
VCE(sat)1 IC=150mA, IB=15mA
Collector-Emitter * KTN2222A - - 0.3
V
Saturation Voltage KTN2222 - - 1.6
VCE(sat)2 IC=500mA, IB=50mA
KTN2222A - - 1
KTN2222 - - 1.3
VBE(sat)1 IC=150mA, IB=15mA
Base-Emitter * KTN2222A 0.6 - 1.2
V
Saturation Voltage KTN2222 - - 2.6
VBE(sat)2 IC=500mA, IB=50mA
KTN2222A - - 2.0
KTN2222 250 - -
Transition Frequency fT IC=20mA, VCE=20V, f=100MHz MHz
KTN2222A 300 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz - - 8 pF
KTN2222 - - 30
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz pF
KTN2222A - - 25
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2003. 6. 16 Revision No : 2 2/5
KTN2222/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
IC=1mA, VCE=10V, f=1kHz 2 - 8
Input Impedance KTN2222A hie k
IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25
IC=1mA, VCE=10V, f=1kHz - - 8
Voltage Feedback Ratio KTN2222A hre x10-4
IC=10mA, VCE=10V, f=1kHz - - 4
IC=1mA, VCE=10V, f=1kHz 50 - 300
Small-Singal Current Gain KTN2222A hfe
IC=10mA, VCE=10V, f=1kHz 75 - 375
IC=1mA, VCE=10V, f=1kHz 5 - 35
Collector Output Admittance KTN2222A hoe
IC=10mA, VCE=10V, f=1kHz 25 - 200
Collector-Base Time Constant KTN2222A Cc rbb' IE=20mA, VCB=20V, f=31.8MHz - - 150 pS
IC=100 A, VCE=10V,
Noise Figure KTN2222A NF - - 4 dB
Rg=1k , f=1kHz
Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10
Rise Time tr IC=150mA, IB1=15mA - - 25
Switching Time nS
Storage Time tstg VCC=30V, IC=150mA - - 225
Fall Time tf IB1=-IB2=15mA - - 60
2003. 6. 16 Revision No : 2 3/5
KTN2222/A
I C - V CE h FE - I C
1000 1K
COMMON EMITTER VCE =10V
COLLECTOR CURRENT I C (mA)
Ta=25 C
500
800
DC CURRENT GAIN h FE
20mA 16mA 300
18mA 14mA Ta=75 C
12mA Ta=25 C
600 10mA Ta=-25 C
8mA
6mA 100 VCE =1V
4mA VCE =2V
400
I B =2mA 50
30
200
10
0 0.4 0.8 1.2 1.6 1.8 0.5 1 3 10 30 100 300 1K
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1.6
COLLECTOR-EMITTER SATURATION
0.6
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B =10 I C /I B =10
1.4
Ta=25 C
VOLTAGE VCE(sat) (V)
VOLTAGE VBE(sat) (V)
1.2
VBE(sat)
0.4
1.0
Ta=-25 C
0.8
Ta=25 C
0.6
0.2 Ta=75 C
0.4
VCE(sat) 0.2
0 0
0.5 1 3 10 30 100 300 1k 0.5 1 3 10 30 100 300 1k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE fT - IC
500 1000
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER Ta=25 C
300 VCE =10V VCE =10V
COLLECTOR CURRENT I C (mA)
100 300
30
Ta=75 C 100
10
3
C
25
30
Ta=
Ta=-25 C
1
0.3 10
-1 -3 -10 -30 -100 -300 -1k -3k
0.1
0.05 COLLECTOR CURRENT I C (mA)
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
BASE-EMITTER VOLTAGE VBE (V)
2003. 6. 16 Revision No : 2 4/5
KTN2222/A
Cob - V CB Pc - Ta
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
Cib - V EB
COLLECTOR INPUT CAPACITANCE Cib (pF)
100 700
COLLECTOR POWER DISSIPATION
COMMON EMITTER
f=1MHz, Ta=25 C 600
30
500
PC (mW)
Cib 400
10
300
Cob 200
3.0
100
1.0 0
-0.1 -1.0 -10 -100 -300 0 25 50 75 100 125 150 175
COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)
EMITTER-BASE VOLTAGE VEB (V)
2003. 6. 16 Revision No : 2 5/5
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