Service Manuals, User Guides, Schematic Diagrams or docs for : . Electronic Components Datasheets Active components Transistors KEC ktx211e
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SEMICONDUCTOR KTX211E
TECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
Including two devices in TES6.
1 6 DIM MILLIMETERS
C
(Thin Extreme Super mini type with 6 leads.) A _
1.6 + 0.05
A1
A
A1 _
1.0 + 0.05
With Built-in bias resistors. 2 5
C
B _
1.6 + 0.05
Simplify circuit design. B1 _
1.2 + 0.05
D
3 4 C 0.50
Reduce a quantity of parts and manufacturing process. D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P
EQUIVALENT CIRCUIT P P 5
Q1 C Q2 OUT
H
J
R1 Q2
IN 1. Q1 (EMITTER)
B 2. Q1 (BASE)
R1=2.2K 3. Q2 OUT (COLLECTOR)
R2=2.2K 4. Q2 COMMON (EMITTER)
R2 5. Q2 IN (BASE)
6. Q1 (COLLECTOR)
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW) TES6
6 5 4
Marking
6 5 4
Lot No.
Q1
BF
Q2 Type Name
1 2 3
1 2 3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -15 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -6 V
IC -500
Collector Current
ICP * -1
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO 50 V
Input Voltage VI 12, -10 V
Output Current IO 100
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation PD * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 1 1/4
KTX211E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-15V, IE=0 - - -100 nA
Collector-Base Breakdown Voltage V(BR)CBO IE=-10 A -15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -6 - - V
DC Current Gain hFE VCE=-2V, IC=-10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=-200mA, IB=-10mA - -100 -250 mV
Transition Frequency fT VCE=-2V, IC=-10mA, fT=100MHz - 260 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 6.5 - pF
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Output Cut-off Current IO(OFF) VO=50V, VI=0 - - 500
DC Current Gain GI VO=5V, IO=20 20 - -
Output Voltage VO(ON) IO=10 , II=0.5 - 0.1 0.3 V
Input Voltage (ON) VI(ON) VO=0.3V, IO=20 - 1.83 3 V
Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1 0.5 1.15 - V
Transition Frequency fT * VO=10V, IO=5 - 250 -
Input Current II VI=5V - - 3.8
Note : * Characteristic of Transistor Only.
2008. 9. 23 Revision No : 1 2/4
KTX211E
2008. 9. 23 Revision No : 1 3/4
KTX211E
2008. 9. 23 Revision No : 1 4/4
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