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ktx301u


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                                     SEMICONDUCTOR                                                                        KTX301U
                                                                                               EPITAXIAL PLANAR PNP TRANSISTOR
                                              TECHNICAL DATA                                 SILICON EPITAXIAL PLANAR TYPE DIODE

  GENERAL PURPOSE APPLICATION.
  ULTRA HIGH SPEED SWITCHING APPLICATION.
                                                                                                                      B
  FEATURES                                                                                                            B1

    Including two(TR, Diode) devices in USV.
                                                                                                           1                    5         DIM    MILLIMETERS
    (Ultra Super Mini type with 5 leads)                                                                                                   A            _
                                                                                                                                                   2.00 + 0.20




                                                                                                      C
                                                                                                                                                       _




                                                                                                 A1
                                                                                                           2                                       1.3 + 0.1




                                                                                             A
                                                                                                                                           A1
    Simplify circuit design.                                                                                                                            _




                                                                                                      C
                                                                                                                                           B        2.1 + 0.1
                                                                                                           3                    4    D                  _
     Reduce a quantity of parts and manufacturing process.                                                                                B1       1.25 + 0.1
                                                                                                                                          C           0.65
                                                                                                                                           D     0.2+0.10/-0.05
 EQUIVALENT CIRCUIT (TOP VIEW)                                                                                                             G         0-0.1
                                                                                                                                           H             _
                                                                                                                                                     0.9 + 0.1

         5                4                          Marking                                                                               T     0.15+0.1/-0.05




                                                                                                      H
                                                                                                                                     T


                                                                                                                      G
                                                               5           4
                                                                                   Lot No.
                           Q1                                                                              1. D 1   ANODE
              D1
                                                                                                           2. Q 1   EMITTER
                                                  Type Name
                                                               CA                                          3. Q 1
                                                                                                           4. Q 1
                                                                                                                    BASE
                                                                                                                    COLLECTOR
                                                                                                           5. D 1   CATHODE
         1         2      3
                                                               1     2         3


 MARK SPEC                                                                                                                          USV
                                  KTX301U                          KTX301U
         Type
                                Q1 hFE Rank : Y                Q1 hFE Rank : GR

        Mark                         CA                              CB


 MAXIMUM RATINGS (Ta=25                   )
 TRANSISTOR Q1
                       CHARACTERISTIC                                SYMBOL                      RATING                                         UNIT
   Collector-Base Voltage                                                VCBO                         -50                                        V
   Collector-Emitter Voltage                                             VCEO                         -50                                        V
   Emitter-Base Voltage                                                  VEBO                             -5
   Collector Current                                                      IC                          -150
   Emitter Current                                                        IB                          -30
   Collector Power Dissipation                                            PC                          100
   Junction Temperature                                                   Tj                          150
   Storage Temperature Range                                             Tstg                     -55~150

 DIODE D1
                       CHARACTERISTIC                                SYMBOL                      RATING                                         UNIT
   Maximum (Peak) Reverse Voltage                                        VRM                              85                                     V
   Reverse Voltage                                                       VR                               80                                     V
   Maximum (Peak) Forward Current                                        IFM                          300
   Average Forward Current                                                IO                          100
   Surge Current (10mS)                                                  IFSM                             2                                      A
   Power Dissipation                                                      PD                              -
   Junction Temperature                                                   Tj                          150
   Storage Temperature Range                                             Tstg                    -55 150


2008. 8. 29                        Revision No : 4                                                                                                                1/2
                                                           KTX301U


 ELECTRICAL CHARACTERISTICS (Ta=25 )
 TRANSISTOR Q1

              CHARACTERISTIC                 SYMBOL                  TEST CONDITION               MIN.   TYP.   MAX.   UNIT
   Collector Cut-off Current                    ICBO       VCB=-50V, IE=0                          -      -     -0.1
   Emitter Cut-off Current                      IEBO       VEB=-5V, IC=0                           -      -     -0.1
   DC Current Gain                            hFE (Note)   VCE=-6V, IC=-2                         120     -     400
   Collector-Emitter Saturation Voltage       VCE(SAT)     IC=-100   , IB=-10                      -     -0.1   -0.3    V
   Transition Frequency                             fT     VCE=-10V, IC=-1                         80     -       -
   Collector Output Capacitance                     Cob    VCB=-10V, IE=0, f=1                     -      4      7
   Noise Figure                                     NF     VCE=-6V, IC=-0.1     , f=1   , Rg=10    -     1.0     10     dB
 Note) hFE Classification Y(4):120~240,    GR:200~400.




 DIODE D1

              CHARACTERISTIC                 SYMBOL                  TEST CONDITION               MIN.   TYP.   MAX.   UNIT
                                                VF(1)      IF=1mA                                  -     0.60     -
   Forward Voltage                              VF(2)      IF=10mA                                 -     0.72     -     V
                                                VF(3)      IF=100mA                                -     0.90   1.20
   Reverse Current                                  IR     VR=80V                                  -      -      0.5
   Total Capacitance                                CT     VR=0, f=1                               -     0.9     3.0
   Reverse Recovery Time                            trr    IF=10                                   -     1.6     4.0




2008. 8. 29                       Revision No : 4                                                                             2/2



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