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SEMICONDUCTOR KTX302U
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
B
FEATURES B1
Including two(TR, Diode) devices in USV.
1 5 DIM MILLIMETERS
(Ultra Super Mini type with 5 leads) A _
2.00 + 0.20
C
A1
2 _
1.3 + 0.1
A
A1
Simplify circuit design.
C
B _
2.1 + 0.1
3 4 D _
Reduce a quantity of parts and manufacturing process. B1 1.25+ 0.1
C 0.65
D 0.2+0.10/-0.05
EQUIVALENT CIRCUIT (TOP VIEW) G 0-0.1
_
5 4 Marking H
T
0.9 + 0.1
0.15+0.1/-0.05
H
T
5 4
Lot No. G
D1 Q1
1. D 1 ANODE
CF
Type Name 2. Q 1 BASE
3. Q 1 EMITTER
4. Q 1 COLLECTOR
5. D 1 CATHODE
1 2 3
1 2 3
MARK SPEC
USV
KTX302U KTX302U
Type
Q1 hFE Rank : Y Q1 hFE Rank : GR
Mark CF CH
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5
Collector Current IC -150
Emitter Current IB -30
Collector Power Dissipation PC 100
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~125
DIODE (SBD) D1
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 30 V
Reverse Voltage VR 30 V
Maximum (Peak) Forward Current IFM 300
Average Forward Current IO 200
Surge Current (10mS) IFSM 1 A
Junction Temperature Tj 125
Storage Temperature Range Tstg -55 125
2008. 8. 29 Revision No : 2 1/4
KTX302U
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4 7
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10 dB
Note) hFE Classification Y:120~240, GR:200~400.
DIODE (SBD) D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.22 -
VF(2) IF=10mA - 0.29 -
Forward Voltage V
VF(3) IF=100mA - 0.38 -
VF(4) IF=200mA - 0.43 0.55
Reverse Current IR VR=30V - - 50
Total Capacitance CT VR=0, f=1 - 50 -
2008. 8. 29 Revision No : 2 2/4
KTX302U
Q1 (PNP TRANSISTOR)
IC - VCE hFE - IC
-240 3k
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
I B =-2.0mA
Ta=25 C COMMON EMITTER
-200
DC CURRENT GAIN hFE
I B =-1.5mA
1k
-160
I B =-1.0mA 500
-120 300 Ta=100 C VCE =-6V
I B =-0.5mA Ta=25 C
-80
Ta=-25 C
I B =-0.2mA 100 VCE =-1V
-40
50
I B =0mA
0 30
0 -1 -2 -3 -4 -5 -6 -7 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC VBE(sat) - IC
COLLECTOR-EMITTER SATURATION
-1 -10
BASE-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
-0.5 IC /IB =10 I C /IB =10
-5
VOLTAGE VBE(sat) (V)
VOLTAGE VCE(sat) (V)
Ta=25 C
-0.3 -3
C
-0.1 00 -1
1
Ta=
-0.05 -0.5
-0.03 Ta=25 C
-0.3
Ta=-25 C
-0.01 -0.1
-0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
fT - IC IB - VBE
TRANSITION FREQUENCY fT (MHz)
3k -1k
COMMON EMITTER COMMON EMITTER
VCE =-10V
BASE CURRENT IB (◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo