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SEMICONDUCTOR KTX311T
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
E
B
FEATURES DIM MILLIMETERS
A _
2.9 + 0.2
1 5
Including two(TR, Diode) devices in TSV. B 1.6+0.2/-0.1
C _
0.70 + 0.05
(Thin Super Mini type with 5 pin)
G
2 _
D 0.4 + 0.1
Simplify circuit design.
F
A
E 2.8+0.2/-0.3
F _
1.9 + 0.2
3 4
G
Reduce a quantity of parts and manufacturing process. G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
EQUIVALENT CIRCUIT (TOP VIEW) K 0.60
L 0.55
C
L
5 4
Marking I H
J J
5 4
h FE Rank Lot No.
Q1 1. D 1 ANODE
C
D1 2. Q 1 EMITTER
Type Name
3. Q 1 BASE
4. Q 1 COLLECTOR
5. D 1 CATHODE
1 2 3 1 2 3
TSV
MARK SPEC
KTX311T KTX311T
Type
Q1 hFE Rank : Y Q1 hFE Rank : GR
Mark CB CC
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -20 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1 A
Emitter Current IE 1 A
Collector Power Dissipation PC * 0.9
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
* Package mounted on a ceramic board (600 0.8 )
DIODE D1
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 25 V
Reverse Voltage VR 20 V
Average Forward Current IO 1.0 A
Non-Repetitive Peak Surge current IFSM 3
Junction Temperature Tj 125
Storage Temperature Tstg -55~125
2002. 8. 13 Revision No : 2 1/4
KTX311T
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-20V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
hFE(1) (Note) VCE=-2V, IC=-50 120 - 400
DC Current Gain
hFE(2) VCE=-2V, IC=-1A (Pulse) 30 - -
Collector-Emitter Saturation Voltage VCE(SAT) IC=-500 , IB=-50 - -0.15 -0.3 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-500 , IB=-50 - -0.85 -1.2 V
Transition Frequency fT VCE=-10V, IC=-50 - 180 -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 25 -
Note) hFE Classification Y:120~240, GR:200~400.
DIODE D1
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Forward Voltage VF IF=1.0A - 0.4 0.45 V
Reverse Current IR VR=20V - - 200
2002. 8. 13 Revision No : 2 2/4
KTX311T
D 1 (DIODE)
IF - V F I R - VR
2
1 10
C
Ta=125
REVERSE CURRENT I R (mA)
FORWARD CURRENT I F (A)
10
100m C
25 C
=1 Ta=75
C
C
1
C
Ta
5
25
5
=7
=2
=-
Ta
Ta
Ta
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